Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

doi:10.1088/1674-1056/22/2/028101

Abstract In this paper, Raman shifts of a-plane GaN layers grown on r-plane sapphire substrates by low-pressure metal-organic chemical vapor deposition (LPMOCVD) are investigated. We compare the crystal qualities and study the relationships between Raman shift and temperature for conventional a-plane GaN epilayer and insertion AlN/AlGaN superlattice layers for a-plane GaN epilayer using temperature-dependent Raman scattering in a temperature range from 83 K to 503 K. The temperature-dependences of GaN phonon modes (A₁ (TO), E₂ (high), and E₁ (TO)) and the linewidths of E₂ (high) phonon peak are studied. The results indicate that there exist two mechanisms between phonon peaks in the whole temperature range, and the relationship can be fitted to the pseudo-Voigt function. From analytic results we find a critical temperature existing in the relationship, which can characterize the anharmonic effects of a-plane GaN in different temperature ranges. In the range of higher temperature, the relationship exhibits an approximately linear behavior, which is consistent with the analyzed results theoretically.

Keywords: metal-organic chemical vapor deposition Raman shift crystal quality anharmonic effect

Received: 29 April 2012
Revised: 09 August 2012
Accepted manuscript online:

PACS:	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)
	78.55.Cr	(III-V semiconductors)

Fund: Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002); the National Key Science & Technology Special Project, China (Grant No. 2008ZX01002-002); the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033); and the Science Fund for Youths Scholars (Grant Nos. 61204006).

Corresponding Authors: Wang Dang-Hui
E-mail: wdhyxp@163.com

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Wang Dang-Hui (王党会), Xu Sheng-Rui (许晟瑞), Hao Yue (郝跃), Zhang Jin-Cheng (张进成), Xu Tian-Han (许天旱), Lin Zhi-Yu (林志宇), Zhou Hao (周昊), Xue Xiao-Yong (薛晓咏 ) Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering 2013 Chin. Phys. B 22 028101

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Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering

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