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Chin. Phys. B, 2011, Vol. 20(4): 047101    DOI: 10.1088/1674-1056/20/4/047101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study of electronic structures and absorption bands of BaMgF4 crystal with F colour centre

Kang Ling-Ling(康玲玲)a),Liu Ting-Yu(刘廷禹)a), Zhang Qi-Ren(张启仁)a), Xu Ling-Zhi(徐灵芝)a), and Zhang Fei-Wu(张飞武) b)
a College of Science, University of Shanghai for Science and Technology, Shanghai 200093, China; b Nanochemistry Research Institute, Curtin University, GPO Box U1987, Perth, WA 6845, Australia
Abstract  The electronic structures of BaMgF4 crystals containing an F colour centre are studied within the framework of the fully relativistic self-consistent Direc–Slater theory, using a numerically discrete variational (DV-X$\alpha$) method. It is concluded from the calculated results that the energy levels of the F colour centre are located in the forbidden band. The optical transition energy from the ground state to the excited state for the F colour centre is about 5.12 eV, which corresponds to the 242-nm absorption band. These calculated results can explain the origin of the absorption bands.
Keywords:  electronic structures      F-type colour centre      DV-X$\alpha$ (numerically discrete variational method)      BaMgF4 crystal   
Received:  08 August 2010      Revised:  04 December 2010      Accepted manuscript online: 
PACS:  71.15.-m (Methods of electronic structure calculations)  
  76.30.Mi (Color centers and other defects)  
Fund: Project supported by the Foundation of Shanghai Municipal Education Committee, China (Grant No. 09YZ210) and the Shanghai Leading Academic Discipline Project (Grant No. S30502).

Cite this article: 

Kang Ling-Ling(康玲玲), Liu Ting-Yu(刘廷禹), Zhang Qi-Ren(张启仁), Xu Ling-Zhi(徐灵芝), and Zhang Fei-Wu(张飞武) Study of electronic structures and absorption bands of BaMgF4 crystal with F colour centre 2011 Chin. Phys. B 20 047101

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