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Chin. Phys. B, 2011, Vol. 20(11): 117301    DOI: 10.1088/1674-1056/20/11/117301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

Chen Feng-Ping(陈丰平)a)† , Zhang Yu-Ming(张玉明)a), Zhang Yi-Men(张义门)a), Tang Xiao-Yan(汤晓燕)a), Wang Yue-Hu(王悦湖) a), and Chen Wen-Hao(陈文豪)b)
a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; b School of Technical Physics, Xidian University, Xi'an 710071, China
Abstract  The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm2.
Keywords:  4H-SiC      junction barrier Schottky      offset field plate      electrical characteristics  
Received:  30 March 2011      Revised:  03 May 2011      Accepted manuscript online: 
PACS:  73.40.Ns (Metal-nonmetal contacts)  
  73.40.-c (Electronic transport in interface structures)  
  85.30.Hi (Surface barrier, boundary, and point contact devices)  
  85.30.Kk (Junction diodes)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No. 2008ZDKG-30).

Cite this article: 

Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode 2011 Chin. Phys. B 20 117301

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