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Chin. Phys. B, 2009, Vol. 18(7): 3044-3048    DOI: 10.1088/1674-1056/18/7/072
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

Ding Wu-Chang(丁武昌), Liu Yan(刘艳), Zhang Yun(张云), Guo Jian-Chuan(郭剑川), Zuo Yu-Hua(左玉华), Cheng Bu-Wen(成步文), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明)
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 ℃ is needed to optically activate Er3+, which may be the main obstacle to impede the application of Er-doped silicon nitride.
Keywords:  Er doping      silicon nitride      photoluminescence  
Received:  15 December 2008      Revised:  07 January 2009      Accepted manuscript online: 
PACS:  78.55.Hx (Other solid inorganic materials)  
  52.77.Dq (Plasma-based ion implantation and deposition)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  78.66.Nk (Insulators)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60336010) and the Major State Basic Research Program of China (Grant Nos 2006CB302802 and 2007CB613404).

Cite this article: 

Ding Wu-Chang(丁武昌), Liu Yan(刘艳), Zhang Yun(张云), Guo Jian-Chuan(郭剑川), Zuo Yu-Hua(左玉华), Cheng Bu-Wen(成步文), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明) A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions 2009 Chin. Phys. B 18 3044

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