Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology

doi:10.1088/1674-1056/abf63f

Abstract A high quality epitaxial Si layer by molecular beam epitaxy (MBE) on Si (001) substrates was demonstrated to fabricate a channel with low density defects for high-performance FinFET technology. In order to study the effects of fin width and crystallography orientation on the MBE behavior, a 30 nm thick Si layer was deposited on the top of an etched Si fin with different widths from 10 nm to 50 nm and orientations of <100> and <110>. The result shows that a defect-free Si film was obtained on the fin by MBE, since the etching damage was confined in the bottom of the epitaxial layer. In addition, the vertical growth of the epitaxial Si layer was observed on sub-10 nm <100> Si fins, and this was explained by a kinetic mechanism.

Keywords: sub-10 nm fin molecular beam epitaxy defects mobility

Received: 25 January 2021
Revised: 01 April 2021
Accepted manuscript online: 09 April 2021

PACS:	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	61.72.uf	(Ge and Si)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	73.50.Dn	(Low-field transport and mobility; piezoresistance)

Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0200504) and the National Natural Science Foundation of China (Grant No. 61927901).

Corresponding Authors: Jian-Jun Zhang, Ming Li
E-mail: jjzhang@iphy.ac.cn;liming.ime@pku.edu.cn

Cite this article:

Shuang Sun(孙爽), Jian-Huan Wang(王建桓), Bao-Tong Zhang(张宝通), Xiao-Kang Li(李小康), Qi-Feng Cai(蔡其峰), Xia An(安霞), Xiao-Yan Xu(许晓燕), Jian-Jun Zhang(张建军), and Ming Li(黎明) Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology 2021 Chin. Phys. B 30 078104

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Vertical MBE growth of Si fins on sub-10 nm patterned substrate for high-performance FinFET technology

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