Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content

doi:10.1088/1674-1056/abd692

Abstract Photoluminescence (PL) spectra of two different green InGaN/GaN multiple quantum well (MQW) samples S1 and S2, respectively with a higher growth temperature and a lower growth temperature of InGaN well layers are analyzed over a wide temperature range of 6 K-330 K and an excitation power range of 0.001 mW-75 mW. The excitation power-dependent PL peak energy and linewidth at 6 K show that in an initial excitation power range, the emission process of the MQW is dominated simultaneously by the combined effects of the carrier scattering and Coulomb screening for both the samples, and both the carrier scattering effect and the Coulomb screening effect are stronger for S2 than those for S1; in the highest excitation power range, the emission process of the MQWs is dominated by the filling effect of the high-energy localized states for S1, and by the Coulomb screening effect for S2. The behaviors can be attributed to the fact that sample S2 should have a higher amount of In content in the InGaN well layers than S1 because of the lower growth temperature, and this results in a stronger component fluctuation-induced potential fluctuation and a stronger well/barrier lattice mismatch-induced quantum-confined Stark effect. This explanation is also supported by other relevant measurements of the samples, such as temperature-dependent peak energy and excitation-power-dependent internal quantum efficiency.

Keywords: photoluminescence carrier localization effect internal quantum efficiency growth temperature

Received: 21 October 2020
Revised: 10 December 2020
Accepted manuscript online: 01 January 1900

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.67.De	(Quantum wells)
	72.15.Rn	(Localization effects (Anderson or weak localization))
	78.66.Fd	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51672163 and 51872167) and the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112).

Corresponding Authors: ^†Corresponding author. E-mail: jiziwu@sdu.edu.cn

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Rui Li(李睿), Ming-Sheng Xu(徐明升), Peng Wang(汪鹏), Cheng-Xin Wang(王成新), Shang-Da Qu(屈尚达), Kai-Ju Shi(时凯居), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武) Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content 2021 Chin. Phys. B 30 047801

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Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content

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