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CN 11-5639/O4
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Other articles related with "78.67.De":
107302 Xiaoguang Wu
  Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field
    Chin. Phys. B   2019 Vol.28 (10): 107302-107302 [Abstract] (61) [HTML 1 KB] [PDF 4387 KB] (41)
107803 Chang-Fu Li, Kai-Ju Shi, Ming-Sheng Xu, Xian-Gang Xu, Zi-Wu Ji
  Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells
    Chin. Phys. B   2019 Vol.28 (10): 107803-107803 [Abstract] (64) [HTML 1 KB] [PDF 1958 KB] (41)
97801 Yi Li, Youhua Zhu, Meiyu Wang, Honghai Deng, Haihong Yin
  Improvement of TE-polarized emission in type-Ⅱ InAlN-AlGaN/AlGaN quantum well
    Chin. Phys. B   2019 Vol.28 (9): 97801-097801 [Abstract] (76) [HTML 1 KB] [PDF 495 KB] (457)
87802 Qi Wang, Guo-Dong Yuan, Wen-Qiang Liu, Shuai Zhao, Lu Zhang, Zhi-Qiang Liu, Jun-Xi Wang, Jin-Min Li
  101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate[J]. Chinese Physics B, 2019,28(8): 87802-087802')"/> Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
    Chin. Phys. B   2019 Vol.28 (8): 87802-087802 [Abstract] (72) [HTML 1 KB] [PDF 1631 KB] (89)
87803 Monica Gambhir, Vinod Prasad
  Non-perturbative multiphoton excitation studies in an excitonic coupled quantum well system using high-intensity THz laser fields
    Chin. Phys. B   2019 Vol.28 (8): 87803-087803 [Abstract] (80) [HTML 1 KB] [PDF 2802 KB] (75)
34202 Jin-Ming Shang, Jian Feng, Cheng-Ao Yang, Sheng-Wen Xie, Yi Zhang, Cun-Zhu Tong, Yu Zhang, Zhi-Chuan Niu
  High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
    Chin. Phys. B   2019 Vol.28 (3): 34202-034202 [Abstract] (141) [HTML 1 KB] [PDF 1109 KB] (78)
27801 Xiaohao Zhou, Ning Li, Wei Lu
  Progress in quantum well and quantum cascade infrared photodetectors in SITP
    Chin. Phys. B   2019 Vol.28 (2): 27801-027801 [Abstract] (198) [HTML 1 KB] [PDF 6844 KB] (176)
14208 Sheng-Wen Xie, Yu Zhang, Cheng-Ao Yang, Shu-Shan Huang, Ye Yuan, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
  High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars
    Chin. Phys. B   2019 Vol.28 (1): 14208-014208 [Abstract] (315) [HTML 1 KB] [PDF 580 KB] (163)
37804 Jing-Jing Yang, Qing-Qing Fang, Wen-Han Du, Ke-Ke Zhang, Da-Shun Dong
  High mobility ultrathin ZnO p-n homojunction modulated by Zn0.85Mg0.15O quantum barriers
    Chin. Phys. B   2018 Vol.27 (3): 37804-037804 [Abstract] (116) [HTML 1 KB] [PDF 1060 KB] (130)
17803 Feng Xu(徐峰), Peng Chen(陈鹏), Fu-Long Jiang(蒋府龙), Ya-Yun Liu(刘亚云), Zi-Li Xie(谢自立), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Yi Shi(施毅), Rong Zhang(张荣), You-Liao Zheng(郑有炓)
  High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
    Chin. Phys. B   2017 Vol.26 (1): 17803-017803 [Abstract] (194) [HTML 1 KB] [PDF 684 KB] (362)
17805 Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫)
  Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths
    Chin. Phys. B   2017 Vol.26 (1): 17805-017805 [Abstract] (178) [HTML 1 KB] [PDF 308 KB] (255)
107803 Liang Qiao, Zi-Guang Ma, Hong Chen, Hai-Yan Wu, Xue-Fang Chen, Hao-Jun Yang, Bin Zhao, Miao He, Shu-Wen Zheng, Shu-Ti Li
  Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
    Chin. Phys. B   2016 Vol.25 (10): 107803-107803 [Abstract] (206) [HTML 1 KB] [PDF 931 KB] (233)
24204 Cheng-Ao Yang, Yu Zhang, Yong-Ping Liao, Jun-Liang Xing, Si-Hang Wei, Li-Chun Zhang, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
  2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography
    Chin. Phys. B   2016 Vol.25 (2): 24204-024204 [Abstract] (271) [HTML 1 KB] [PDF 966 KB] (278)
14202 Yan-Chao She, Ting-Ting Luo, Wei-Xi Zhang, Mao-Wu Ran, Deng-Long Wang
  Steady-state linear optical properties and Kerr nonlinear optical response of a four-level quantum dot with phonon-assisted transition
    Chin. Phys. B   2016 Vol.25 (1): 14202-014202 [Abstract] (275) [HTML 1 KB] [PDF 673 KB] (288)
127801 Liu Wei, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Liu Zong-Shun, Zhu Jian-Jun, Li Xiang, Liang Feng, Liu Jian-Ping, Yang Hui
  Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode
    Chin. Phys. B   2015 Vol.24 (12): 127801-127801 [Abstract] (321) [HTML 1 KB] [PDF 1354 KB] (381)
97301 Wu Xiao-Guang, Pang Mi
  Landau level transitions in InAs/AlSb/GaSb quantum wells
    Chin. Phys. B   2015 Vol.24 (9): 97301-097301 [Abstract] (410) [HTML 1 KB] [PDF 2750 KB] (278)
24219 Wang Qiang, Ji Zi-Wu, Wang Fan, Mu Qi, Zheng Yu-Jun, Xu Xian-Gang, Lü Yuan-Jie, Feng Zhi-Hong
  Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells
    Chin. Phys. B   2015 Vol.24 (2): 24219-024219 [Abstract] (282) [HTML 0 KB] [PDF 484 KB] (328)
124202 She Yan-Chao, Zheng Xue-Jun, Wang Deng-Long
  Enhancement of four-wave mixing process in a four-level double semiconductor quantum well
    Chin. Phys. B   2014 Vol.23 (12): 124202-124202 [Abstract] (125) [HTML 1 KB] [PDF 331 KB] (258)
116103 He Chao, Liu Zhi, Zhang Xu, Huang Wen-Qi, Xue Chun-Lai, Cheng Bu-Wen
  Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
    Chin. Phys. B   2014 Vol.23 (11): 116103-116103 [Abstract] (234) [HTML 1 KB] [PDF 719 KB] (259)
44205 Tian Si-Cong, Tong Cun-Zhu, Wan Ren-Gang, Ning Yong-Qiang, Qin Li, Liu Yun, Wang Li-Jun, Zhang Hang, Wang Zeng-Bin, Gao Jin-Yue
  Phase control of light amplification in steady and transient processes in an inverted-Y atomic system with spontaneously generated coherence
    Chin. Phys. B   2014 Vol.23 (4): 44205-044205 [Abstract] (146) [HTML 1 KB] [PDF 494 KB] (321)
48502 Yang Bin, Guo Zhi-You, Xie Nan, Zhang Pan-Jun, Li Jing, Li Fang-Zheng, Lin Hong, Zheng Huan, Cai Jin-Xin
  A GaN–AlGaN–InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED
    Chin. Phys. B   2014 Vol.23 (4): 48502-048502 [Abstract] (122) [HTML 1 KB] [PDF 1099 KB] (724)
27304 Zhang Jie, Yu Jin-Ling, Cheng Shu-Ying, Lai Yun-Feng, Chen Yong-Hai
  Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence
    Chin. Phys. B   2014 Vol.23 (2): 27304-027304 [Abstract] (182) [HTML 1 KB] [PDF 250 KB] (361)
17805 Xing Jun-Liang, Zhang Yu, Xu Ying-Qiang, Wang Guo-Wei, Wang Juan, Xiang Wei, Ni Hai-Qiao, Ren Zheng-Wei, He Zhen-Hong, Niu Zhi-Chuan
  High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
    Chin. Phys. B   2014 Vol.23 (1): 17805-017805 [Abstract] (168) [HTML 1 KB] [PDF 1617 KB] (425)
17806 Yu Jin-Ling, Chen Yong-Hai, Lai Yun-Feng, Cheng Shu-Ying
  Spin–orbit coupling effects on the in-plane optical anisotropy of semiconductor quantum wells
    Chin. Phys. B   2014 Vol.23 (1): 17806-017806 [Abstract] (127) [HTML 1 KB] [PDF 359 KB] (344)
117804 Zhong Can-Tao, Yu Tong-Jun, Yan Jian, Chen Zhi-Zhong, Zhang Guo-Yi
  Degradation behaviors of high power GaN-based blue light emitting diodes
    Chin. Phys. B   2013 Vol.22 (11): 117804-117804 [Abstract] (166) [HTML 1 KB] [PDF 261 KB] (1015)
47801 Yang Wei, Wu Yi-Yang, Liu Ning-Yang, Liu Lei, Chen Zhao, Hu Xiao-Dong
  Optical properties of ultra-thin InN layer embedded in InGaN matrix for light emitters
    Chin. Phys. B   2013 Vol.22 (4): 47801-047801 [Abstract] (281) [HTML 1 KB] [PDF 260 KB] (451)
37802 Gu Yi, Zhang Yong-Gang, Song Yu-Xin, Ye Hong, Cao Yuan-Ying, Li Ai-Zhen, Wang Shu-Min
  Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
    Chin. Phys. B   2013 Vol.22 (3): 37802-037802 [Abstract] (342) [HTML 0 KB] [PDF 305 KB] (1044)
26102 Yan Qi-Rong, Yan Qi-Ang, Shi Pei-Pei, Niu Qiao-Li, Li Shu-Ti, Zhang Yong
  Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells
    Chin. Phys. B   2013 Vol.22 (2): 26102-026102 [Abstract] (446) [HTML 1 KB] [PDF 372 KB] (691)
84207 Cao Xiao-Long, Li Zhong-Yang, Yao Jian-Quan, Wang Yu-Ye, Zhu Neng-Nian, Zhong Kai, Xu De-Gang
  Intersubband absorption with difference-frequency generation in GaAs asymmetric quantum wells
    Chin. Phys. B   2012 Vol.21 (8): 84207-084207 [Abstract] (762) [HTML 1 KB] [PDF 3030 KB] (543)
57107 Zhang Wei-Li,Rao Yun-Jiang
  Optical Tamm state polaritons in a quantum well microcavity with gold layers
    Chin. Phys. B   2012 Vol.21 (5): 57107-057107 [Abstract] (1076) [HTML 1 KB] [PDF 685 KB] (582)
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