Abstract Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the $I$-$V$ characteristics. The interface oxide capacitance $C_{\rm i}$ is extracted for the first time, as far as we know. Parameters of 4H-SiC Schottky diodes fabricated for testing in this paper are: the ideality factor $n$, the series resistance $R_{\rm s}$, the zero-field barrier height $\phi_{\rm B0}$, the interface state density $D_{\rm it}$, the interface oxide capacitance $C_{\rm i}$ and the neutral level of interface states $\phi_0$.
Received: 19 April 2002
Revised: 24 September 2002
Accepted manuscript online:
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