Abstract 1.3 um emitting InAs/GaAs quantum dots (QDs) have been grown by molecular beam epitaxy and QD light emitting diodes (LEDs) have been fabricated. In the electroluminescence spectra of QD LEDs, two clear peaks corresponding to the ground state emission and the excited state emission are observed. It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect. This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.
Received: 17 May 2002
Revised: 12 July 2002
Accepted manuscript online:
Fund: Project supported by the Nano Science and Technology Project of Chinese Academy of Sciences, and the National Natural Science Foundation of China (Grant Nos 60176006 and 60025410).
Cite this article:
Kong Yun-Chuan (孔云川), Zhou Da-Yong (周大勇), Lan Qing (澜 清), Liu Jin-Long (刘金龙), Miao Zhen-Hua (苗振华), Feng Song-Lin (封松林), Niu Zhi-Chuan (牛智川) A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy 2003 Chinese Physics 12 97
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