Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

doi:10.1088/1674-1056/ac248e

Abstract The effects of the interlayer distance on the nonlinear optical properties of n-type quadruple δ-doped GaAs quantum well were theoretically investigated. Particularly, the absorption coefficient and the relative refraction index change were determined. In the effective mass approach and within the framework of the Thomas-Fermi theory, the Schrödinger equation was resolved. Thereby, the subband energy levels and their respective wave functions were calculated. The variations in the nonlinear optical properties were determined by using the density matrix solutions. The achieved results demonstrate that the interlayer distance causes optical red-shift on nonlinear optical properties. Therefore, it can be deduced that the suitably chosen interlayer distance can be used to tune optical properties within the infrared spectrum region in optoelectronic devices such as far-infrared photo-detectors, high-speed electronic-optical modulators, and infrared lasers.

Keywords: delta-doping n-type GaAs layers electronic structure non-linear optical properties

Received: 24 June 2021
Revised: 06 September 2021
Accepted manuscript online: 08 September 2021

PACS:	42.65.-k	(Nonlinear optics)
	64.70.Tg	(Quantum phase transitions)
	42.70.Nq	(Other nonlinear optical materials; photorefractive and semiconductor materials)

Corresponding Authors: Humberto Noverola-Gamas
E-mail: noverola86@gmail.com

Cite this article:

Humberto Noverola-Gamas, Luis Manuel Gaggero-Sager, and Outmane Oubram Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells 2022 Chin. Phys. B 31 044203

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Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

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