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Chin. Phys. B, 2020, Vol. 29(4): 047104    DOI: 10.1088/1674-1056/ab7746
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Min-Han Mi(宓珉瀚)1, Sheng Wu(武盛)1, Ling Yang(杨凌)2, Yun-Long He(何云龙)1, Bin Hou(侯斌)1, Meng Zhang(张濛)1, Li-Xin Guo(郭立新)3, Xiao-Hua Ma(马晓华)1, Yue Hao(郝跃)1
1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China
Abstract  The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications. The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier. F-based etching can be self-terminated after removing SiN, leaving the AlGaN barrier in the gate region. With this in-situ SiN and thin barrier etch-stop structure, the short channel effect can be suppressed, meanwhile achieving highly precisely controlled and low damage etching process. The device shows a maximum drain current of 1022 mA/mm, a peak transconductance of 459 mS/mm, and a maximum oscillation frequency (fmax) of 248 GHz.
Keywords:  AlGaN/GaN      in-situ SiN      etch-stop barrier  
Received:  04 February 2020      Revised:  14 February 2020      Published:  05 April 2020
PACS:  71.55.Eq (III-V semiconductors)  
  73.20.-r (Electron states at surfaces and interfaces)  
  73.50.-h (Electronic transport phenomena in thin films)  
Fund: Project supported by the China Postdoctoral Science Foundation (Grant No. 2018M640957), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101196761), the National Natural Science Foundation of China (Grant No. 61904135), and the National Defense Pre-Research Foundation of China (Grant No. 31513020307).
Corresponding Authors:  Min-Han Mi     E-mail:  miminhan@qq.com

Cite this article: 

Min-Han Mi(宓珉瀚), Sheng Wu(武盛), Ling Yang(杨凌), Yun-Long He(何云龙), Bin Hou(侯斌), Meng Zhang(张濛), Li-Xin Guo(郭立新), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT 2020 Chin. Phys. B 29 047104

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