Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO2 thin film

doi:10.1088/1674-1056/ab7742

Abstract Mn:ZnSe/ZnS/L-Cys core-shell quantum dots (QDs) sensitized La-doped nano-TiO₂ thin film (QDSTF) was prepared. X-ray photoelectron spectroscopy (XPS), nanosecond transient photovoltaic (TPV), and steady state surface photovoltaic (SPV) technologies were used for probing the photoelectron behaviors in the Mn-doped QDSTF. The results revealed that the Mn-doped QDSTF had a p-type TPV characteristic. The bottom of the conduction band of the QDs as a sensitizer was just 0.86 eV above that of the La-doped nano-TiO₂ thin film, while the acceptor level of the doped Mn²⁺ ions was located at about 0.39 eV below and near the bottom of the conduction band of the QDs. The intensity of the SPV response of the Mn-doped QDSTF at a specific wavelength was ～2.1 times higher than that of the undoped QDSTF. The region of the SPV response of the Mn-doped QDSTF was extended by 191 nm to almost the whole visible region as compared with the undoped QDSTF one. And the region of the TPV response of the Mn-doped QDSTF was also obviously wider than that of the undoped QDSTF. These PV characteristics of the Mn-doped QDSTF may be due to the prolonged lifetime and extended diffusion length of photogenerated free charge carriers injected into the sensitized La-doped nano-TiO₂ thin film.

Keywords: doping effects ZnSe quantum dots sensitization nano-TiO₂ thin film photoelectron spectroscopy

Received: 16 December 2019
Revised: 28 January 2020
Published: 05 April 2020

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	73.63.Kv	(Quantum dots)
	82.80.Pv	(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
	74.78.-w	(Superconducting films and low-dimensional structures)

Fund: Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. E2017203029).

Corresponding Authors: Kui-Ying Li
E-mail: kuiyingli@ysu.edu.cn

Cite this article:

Shao Li(李绍), Gang Li(李刚), Li-Shuang Yang(杨丽爽), Kui-Ying Li(李葵英) Improved carrier transport in Mn:ZnSe quantum dots sensitized La-doped nano-TiO₂ thin film 2020 Chin. Phys. B 29 046104

[1]	Kovtun O, Tomlinson I D, Bailey D M, Thal L B, Ross E J, Harris L, Frankland M P, Ferguson R S, Glaser Z, Greer J and Rosenthal S J 2018 Chem. Phys. Lett. 706 741
[2]	Delikanli S, Guzelturk B, Hernández-Martínez P L, Erdem T, Kelestemur Y, Olutas M, Akgul M Z and Demir H V 2015 Adv. Funct. Mater. 25 4282
[3]	Chistyakov A A, Zvaigzne M A, Nikitenko V R, Tameev A R, Martynov I L and Prezhdo O V 2017 J. Phys. Chem. Lett. 8 4129
[4]	Chaguetmi S, Mammeri F, Nowak S and Decorse P 2013 RSC Adv. 3 2572
[5]	Chen O, Zhao J, Chauhan V P, Cui J, Wong C, Harris D K, Wei H, Han H S, Fukumura D, Jain R K and Bawendi M G 2013 Nat. Mater. 12 445
[6]	Wilson K C, Manikandan E and Ahamed M B 2014 Mater. Lett. 120 295
[7]	Milekhin A G, Sveshnikova L L, Repinsky S M, Gutakovsky A K and Friedrich M 2002 Thin Solid Films 422 200
[8]	Lohar G M, Shinde S K, Rath M C and Fulari V J 2014 Mater. Sci. Semicond. Process. 26 548
[9]	Kennedy J, Murmu P P, Leveneur J, Markwitz A and Futter J 2016 Appl. Surf. Sci. 367 52
[10]	Murray C B, Norris D J and Bawendi M G 1993 J. Am. Chem. Soc. 115 8706
[11]	Sarma D D, Nag A, Santra P K, Kumar A, Sapra S and Mahadevan P 2010 J. Phys. Chem. Lett. 1 2149
[12]	Yu W W, Qu L H, Guo W Z and Peng X G 2003 Chem. Mater. 15 2854
[13]	Hughes B K, Beard M C, Nozik A J and Johnson J C 2011 J. Phys. Chem. Lett. 2 1282
[14]	Speranskaya E S, Beloglazova N V, Lenain P, Saeger S D, Wang Z, Zhang S, Hens Z, Knopp D, Niessner R, Potapkin D V and Goryacheva I Y 2014 Biosens. Bioelectron. 53 225
[15]	Yang Y X, Zheng Y, Cao W R, Titov A, Hyvonen J, Manders J R, Xue J G, Holloway P H and Qian L 2015 Nat. Photon. 9 259
[16]	Meinardi F, McDaniel H, Carulli F, Colombo A, Velizhanin K A, Makarov N S, Simonutti R, Klimov V I and Brovelli S 2015 Nat. Nanotechnol. 10 878
[17]	Shirasaki Y, Supran G J, Bawendi M G and Bulović V 2013 Nat. Photonics. 7 13
[18]	Yan J F and Saunders B R 2014 RSC Adv. 4 43286
[19]	Zhu G, Pan L K, Xu T and Sun Z 2011 ACS Appl. Mater. Inter. 3 3146
[20]	Song X H, Wang M Q, Shi Y H, Deng J P, Yang Z and Yao X 2012 Electrochim. Acta 81 260
[21]	Hossain M A, Jennings J R, Shen C, Pan J H, Koh Z Y, Mathews N and Wang Q 2012 J. Mater. Chem. 22 16235
[22]	Lee H J, Wang M K, Chen P, Gamelin D R, Zakeeruddin S M, Gratzel M and Nazeeruddin M K 2009 Nano. Lett. 9 4221
[23]	Lee Y L, Huang B M and Chien H T 2008 Chem. Mater. 20 6903
[24]	Tian J J, Gao R, Zhang Q F, Li Y W, Lan J, Qu X H and Cao G Z 2012 J. Phys. Chem. C 116 18655
[25]	Lin S C, Lee Y L, Chang C H, Shen Y J and Yang Y M 2007 Appl. Phys. Lett. 90 143517
[26]	Li G S, Zhang D Q and Yu J C 2009 Environ. Sci. Technol. 43 7079
[27]	Huang S Q, Zhang Q X, Huang X M, Guo X Z, Deng M H, Li D M, Luo Y H, Shen Q, Toyoda T and Meng Q B 2010 Nano Technol. 21 375201
[28]	Li K Y and Xue Z J 2014 Mater. Chem. Phys. 148 253
[29]	Ren L, Li K Y, Cui J Y and Shen T D 2018 J. Mater Sci: Mater. Electron. 29 4478
[30]	Li K Y, Shan Q S, Zhu R P, Yin H, Lin Y Y and Wang L Q 2015 Nanoscale 7 7906
[31]	Cui J Y, Li K Y, Ren L, Zhao J and Shen T D 2016 J. Appl. Phys. 120 184302
[32]	Zhang Y, Xie T F, Jiang T F, Wei X, Pang S, Wang X and Wang D J 2009 Nanotechnology 20 155707
[33]	Pernik D R, Turdy K, Radich J G and Kamat P V 2011 J. Phys. Chem. C. 115 13511
[34]	Mocatta D, Cohen G, Schattner J, Millo O, Rabani E and Banin U 2011 Science 332 77
[35]	Antonelli D M and Ying J Y 1995 Angew. Chem. Int. Ed. Engl. 34 2014
[36]	Jing L Q, Sun X J, Xin B F, Wang B Q, Cai W M and Fu H G 2004 J. Solid. State. Chem. 177 3375
[37]	Legrand-Buscema C and Bach C M S 2002 Thin Solid Films 418 79
[38]	Guijarro N, Shen Q, Gimenez S, Mora-Sero I, Bisquert J, Lana-Villarreal T, Toyoda T and Gomez R 2010 J. Phys. Chem. C. 114 22352
[39]	Wei X, Xie T F, Xu D, Zhao Q D, Pang S and Wang D J 2008 Nanotechnology 19 275707
[40]	Nakade S, Saito Y, Kubo W, Kanzaki T, Kitamura T, Wada Y and Yanagida S 2004 J. Phys. Chem. B 108 1628
[41]	Kronik L and Shapira Y 1999 Surf. Sci. Rep. 37 1
[42]	Ren P G, Yan D X, Ji X, Chen T and Li Z M 2011 Nanotechnology 22 055705
[43]	Stankovich S, Dikin D A, Piner R D, Kohlhaas K A, Kleinhammes A, Jia Y Y, Wu Y, Nguyen S B T and Ruoff R S 2007 Carbon 45 1558
[44]	Park S J, An J H, Piner R D, Jung I, Yang D X, Velamakanni A, Nguyen S B T and Ruoff R S 2008 Chem. Mater. 20 6592
[45]	Swart H C, Greeff A P, Holloway P H and Berning G L P 1999 App. Surf. Sci. 140 63
[46]	Shenasa M, Sainkar S and Lichtman D 1986 J. Elecron. Spectrosc. 40 329
[47]	Mandale A B, Badrinarayanan S, Date S K and Sinha A P B 1984 J. Elecron. Spectrosc. 33 61
[48]	Myeongcheol K and Osten H J 1997 Appl. Phys. Lett. 70 2702
[49]	Ludeke R, Ley L and Ploog K 1978 Solid State Commun. 28 57
[50]	Li K Y, Ren L and Shen T D 2018 Chin. Phys. B 27 067305
[51]	Li K Y, Wei S L and Yang W Y 2011 J. Phys. Chem. Solids 72 643
[52]	Balaji S, Djaoued Y and Robichaud J 2006 J. Raman Spectrosc. 37 1416
[53]	Ma W, Lu Z and Zhang M 1998 Appl. Phys. A 66 621
[54]	Ohsaka T 1980 J. Phys. Soc. Jap. 48 1661
[55]	Jiang Y, Meng X M, Yiu W C, Liu J, Ding J X, Lee C S and Lee S T 2004 J. Phys. Chem. B 108 2784
[56]	Shao Y, Cao C S, Chen S L, He M, Fang J L, Chen J, Li X F and Li D Z 2015 Appl. Catal. B-Environ. 179 344
[57]	Xu X Q, Giménez S, Seró I M, Abate A, Bisquert J and Xu G 2010 Mater. Chem. Phys. 124 709
[58]	Winter J O, Gomez N, Gatzert S, Schmidt C E and Korgel B A 2005 Colloids Surf. A: Physicochem. Eng. Aspects. 254 147
[59]	Mahrov B, Boschloo G, Hagfeldt A, Dloczik L and Dittrich Th 2004 Appl. Phys. Lett. 84 5455
[60]	Duzhko V, Koch F and Dittrich Th 2002 J. Appl. Phys. 91 9432
[61]	Lifshitz E, Kaplan A, Ehrenfreund E and Meissner D 1998 J. Phys. Chem. B 102 967

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