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Photoelectric characteristics of silicon P-N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy |
Liu Jing (刘静)a b, Wang Jia-Ou (王嘉鸥)a, Yi Fu-Ting (伊福廷)a, Wu Rui (吴蕊)a, Zhang Nian (张念)a b, Ibrahim Kurash (奎热西)a |
a Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China; b University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Silicon nanopillars are fabricated by inductively coupled plasma (ICP) dry etching with the cesium chloride (CsCl) islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus (P) diffusion by liquid dopant source (POCl3) at 870℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy (XPS) is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.
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Received: 18 December 2013
Revised: 05 March 2014
Accepted manuscript online:
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PACS:
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61.05.cp
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(X-ray diffraction)
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62.23.Hj
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(Nanowires)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50972144). |
Corresponding Authors:
Yi Fu-Ting
E-mail: yift@ihep.ac.cn
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Cite this article:
Liu Jing (刘静), Wang Jia-Ou (王嘉鸥), Yi Fu-Ting (伊福廷), Wu Rui (吴蕊), Zhang Nian (张念), Ibrahim Kurash (奎热西) Photoelectric characteristics of silicon P-N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy 2014 Chin. Phys. B 23 096101
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