Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

doi:10.1088/1674-1056/28/8/087302

Abstract

Dual-active-layer (DAL) amorphous InGaZnO (IGZO) thin-film transistors (TFTs) are fabricated at low temperature without post-annealing. A bottom low-resistance (low-R) IGZO layer and a top high-resistance (high-R) IGZO layer constitute the DAL homojunction with smooth and high-quality interface by in situ modulation of oxygen composition. The performance of the DAL TFT is significantly improved when compared to that of a single-active-layer TFT. A detailed investigation was carried out regarding the effects of the thickness of both layers on the electrical properties and gate bias stress stabilities. It is found that the low-R layer improves the mobility, ON/OFF ratio, threshold voltage and hysteresis voltage by passivating the defects and providing a smooth interface. The high-R IGZO layer has a great impact on the hysteresis, which changes from clockwise to counterclockwise. The best TFT shows a mobility of 5.41 cm²/V…, a sub-threshold swing of 95.0 mV/dec, an ON/OFF ratio of 6.70×10⁷, a threshold voltage of 0.24 V, and a hysteresis voltage of 0.13 V. The value of threshold voltage shifts under positive gate bias stress decreases when increasing the thickness of both layers.

Keywords: thin film transistor InGaZnO dual-active-layer

Received: 03 April 2019
Revised: 04 June 2019
Accepted manuscript online:

PACS:	73.61.Ga	(II-VI semiconductors)
	77.55.hf	(ZnO)
	85.30.-z	(Semiconductor devices)
	85.30.Tv	(Field effect devices)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 11674405, 61874139, and 11675280).

Corresponding Authors: Zengxia Mei, Xiaolong Du
E-mail: zxmei@iphy.ac.cn;xldu@iphy.ac.cn

Cite this article:

Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙) Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors 2019 Chin. Phys. B 28 087302

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Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors

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