Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

doi:10.1088/1674-1056/27/2/028501

Abstract Total ionizing dose responses of different transistor geometries after being irradiated by ⁶⁰Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator (PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect (RINCE). The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.

Keywords: partiallydepleted silicon-on-insulator (PD SOI) totalionizingdose (TID) radiationinduced narrow channel effect (RINCE) drain induced barrier lowering (DIBL) effect

Received: 31 August 2017
Revised: 08 November 2017
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	61.80.-x	(Physical radiation effects, radiation damage)
	07.87.+v	(Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the Weapon Equipment Pre-Research Foundation of China (Grant No. 9140A11020114ZK34147) and the Shanghai Municipal Natural Science Foundation, China (Grant No. 15ZR1447100).

Corresponding Authors: Meng-Ying Zhang
E-mail: myzhang@mail.sim.ac.cn

About author: 85.30.-z; 61.80.-x; 07.87.+v; 85.30.De

Cite this article:

Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选) Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation 2018 Chin. Phys. B 27 028501

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Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

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