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Chin. Phys. B, 2018, Vol. 27(2): 028501    DOI: 10.1088/1674-1056/27/2/028501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation

Meng-Ying Zhang(张梦映)1,2, Zhi-Yuan Hu(胡志远)1, Da-Wei Bi(毕大炜)1, Li-Hua Dai(戴丽华)1,2, Zheng-Xuan Zhang(张正选)1
1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator (PD SOI) technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor (nMOSFET) is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect (RINCE). The analysis based on a charge sharing model and three-dimensional technology computer aided design (TCAD) simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
Keywords:  partiallydepleted silicon-on-insulator (PD SOI)      totalionizingdose (TID)      radiationinduced narrow channel effect (RINCE)      drain induced barrier lowering (DIBL) effect  
Received:  31 August 2017      Revised:  08 November 2017      Published:  05 February 2018
PACS:  85.30.-z (Semiconductor devices)  
  61.80.-x (Physical radiation effects, radiation damage)  
  07.87.+v (Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the Weapon Equipment Pre-Research Foundation of China (Grant No. 9140A11020114ZK34147) and the Shanghai Municipal Natural Science Foundation, China (Grant No. 15ZR1447100).
Corresponding Authors:  Meng-Ying Zhang     E-mail:  myzhang@mail.sim.ac.cn
About author:  85.30.-z; 61.80.-x; 07.87.+v; 85.30.De

Cite this article: 

Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选) Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation 2018 Chin. Phys. B 27 028501

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