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Chin. Phys. B, 2018, Vol. 27(10): 107901    DOI: 10.1088/1674-1056/27/10/107901
Special Issue: TOPICAL REVIEW — Spin manipulation in solids
TOPICAL REVIEW—Spin manipulation in solids Prev   Next  

Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures

Zhen-Hua Wang(王振华)1, Xuan P A Gao(高翾)2, Zhi-Dong Zhang(张志东)1
1 Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;
2 Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, USA
Abstract  

In this review article, the recent experimental and theoretical research progress in Bi2Se3- and Bi2Te3-based topological insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. The electrical transport properties are discussed for a few different types of topological insulator heterostructures, such as heterostructures formed by Bi2Se3- and Bi2Te3-based binary/ternary/quaternary compounds and superconductors, nonmagnetic and magnetic metals, or semiconductors.

Keywords:  transport properties      interfaces      heterostructures      nanostructures      doping      magnetoresistance  
Received:  23 April 2018      Revised:  07 August 2018      Accepted manuscript online: 
PACS:  79.60.Jv (Interfaces; heterostructures; nanostructures)  
  91.60.Tn (Transport properties)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
  73.43.Qt (Magnetoresistance)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 51522104, 51590883, 51331006, and KJZD-EW-M05-3) and the National Science Foundation for its financial support under Award DMR-1151534.

Corresponding Authors:  Zhen-Hua Wang     E-mail:  zhwang@imr.ac.cn

Cite this article: 

Zhen-Hua Wang(王振华), Xuan P A Gao(高翾), Zhi-Dong Zhang(张志东) Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures 2018 Chin. Phys. B 27 107901

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