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    Spin manipulation in semiconductor quantum dots qubit
    Ke Wang(王柯), Hai-Ou Li(李海欧), Ming Xiao(肖明), Gang Cao(曹刚), Guo-Ping Guo(郭国平)
    Chin. Phys. B, 2018, 27 (9): 090308.   DOI: 10.1088/1674-1056/27/9/090308
    Abstract810)   HTML    PDF (7181KB)(597)      

    Thirty years of effort in semiconductor quantum dots has resulted in significant developments in the control of spin quantum bits (qubits). The natural two-energy level of spin states provides a path toward quantum information processing. In particular, the experimental implementation of spin control with high fidelity provides the possibility of realizing quantum computing. In this review, we will discuss the basic elements of spin qubits in semiconductor quantum dots and summarize some important experiments that have demonstrated the direct manipulation of spin states with an applied electric field and/or magnetic field. The results of recent experiments on spin qubits reveal a bright future for quantum information processing.

    Electrical spin polarization through spin-momentum locking in topological-insulator nanostructures
    Minhao Zhang(张敏昊), Xuefeng Wang(王学锋), Fengqi Song(宋凤麒), Rong Zhang(张荣)
    Chin. Phys. B, 2018, 27 (9): 097307.   DOI: 10.1088/1674-1056/27/9/097307
    Abstract831)   HTML    PDF (6236KB)(296)      

    Recently, spin-momentum-locked topological surface states (SSs) have attracted significant attention in spintronics. Owing to spin-momentum locking, the direction of the spin is locked at right angles with respect to the carrier momentum. In this paper, we briefly review the exotic transport properties induced by topological SSs in topological-insulator (TI) nanostructures, which have larger surface-to-volume ratios than those of bulk TI materials. We discuss the electrical spin generation in TIs and its effect on the transport properties. A current flow can generate a pure in-plane spin polarization on the surface, leading to a current-direction-dependent magnetoresistance in spin valve devices based on TI nanostructures. A relative momentum shift of two coupled topological SSs also generates net spin polarization and induces an in-plane anisotropic negative magnetoresistance. Therefore, the spin-momentum locking can enable the broad tuning of the spin transport properties of topological devices for spintronic applications.

    Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors
    Shengli Guo(郭胜利), Fanlong Ning(宁凡龙)
    Chin. Phys. B, 2018, 27 (9): 097502.   DOI: 10.1088/1674-1056/27/9/097502
    Abstract529)   HTML    PDF (2064KB)(330)      

    Diluted ferromagnetic semiconductors (DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic (spintronic) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-V (Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TC of 230 K has been achieved in (Ba,K)(Zn,Mn)2As2. However, most DMSs, including (Ga,Mn)As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently, a new DMS Ba(Zn,Co)2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance (NMR) and muon spin rotation (μSR).

    Voltage control of ferromagnetic resonance and spin waves
    Xinger Zhao(赵星儿), Zhongqiang Hu(胡忠强), Qu Yang(杨曲), Bin Peng(彭斌), Ziyao Zhou(周子尧), Ming Liu(刘明)
    Chin. Phys. B, 2018, 27 (9): 097505.   DOI: 10.1088/1674-1056/27/9/097505
    Abstract573)   HTML    PDF (7189KB)(388)      

    The voltage control of magnetism has attracted intensive attention owing to the abundant physical phenomena associated with magnetoelectric coupling. More importantly, the techniques to electrically manipulate spin dynamics, such as magnetic anisotropy and ferromagnetic resonance, are of great significance because of their potential applications in high-density memory devices, microwave signal processors, and magnetic sensors. Recently, voltage control of spin waves has also been demonstrated in several multiferroic heterostructures. This development provides new platforms for energy-efficient, tunable magnonic devices. In this review, we focus on the most recent advances in voltage control of ferromagnetic resonance and spin waves in magnetoelectric materials and discuss the physical mechanisms and prospects for practical device applications.

    Magnetism manipulation in ferromagnetic/ferroelectric heterostructures by electric field induced strain
    Xiaobin Guo(郭晓斌), Dong Li(李栋), Li Xi(席力)
    Chin. Phys. B, 2018, 27 (9): 097506.   DOI: 10.1088/1674-1056/27/9/097506
    Abstract503)   HTML    PDF (5438KB)(452)      

    Magnetization manipulation by an electric field (E-field) in ferromagnetic/ferroelectric heterostructures has attracted increasing attention because of the potential applications in novel magnetoelectric devices and spintronic devices, due to the ultra-low power consumption of the process. In this review, we summarize the recent progress in E-field controlled magnetism in ferromagnetic/ferroelectric heterostructures with an emphasis on strain-mediated converse magnetoelectric coupling. Firstly, we briefly review the history, the underlying theory of the magnetoelectric coupling mechanism, and the current status of research. Secondly, we illustrate the competitive energy relationship and volatile magnetization switching under an E-field. We then discuss E-field modified ferroelastic domain states and recent progress in non-volatile manipulation of magnetic properties. Finally, we present the pure E-field controlled 180° in-plane magnetization reversal and both E-field and current modified 180° perpendicular magnetization reversal.

    Spin detection and manipulation with scanning tunneling microscopy
    Chunlei Gao(高春雷)
    Chin. Phys. B, 2018, 27 (10): 106701.   DOI: 10.1088/1674-1056/27/10/106701
    Abstract842)   HTML    PDF (2275KB)(325)      

    Over the past few decades, spin detection and manipulation at the atomic scale using scanning tunneling microcopy has matured, which has opened the possibility of realizing spin-based functional devices with single atoms and molecules. This article reviews the principle of spin polarized scanning tunneling microscopy and inelastic tunneling spectroscopy, which are used to measure the static spin structure and dynamic spin excitation, respectively. Recent progress will be presented, including complex spin structure, magnetization of single atoms and molecules, as well as spin excitation of single atoms, clusters, and molecules. Finally, progress in the use of spin polarized tunneling current to manipulate an atomic magnet is discussed.

    Spin switching in antiferromagnets using Néel-order spin-orbit torques
    P Wadley, K W Edmonds
    Chin. Phys. B, 2018, 27 (10): 107201.   DOI: 10.1088/1674-1056/27/10/107201
    Abstract688)   HTML    PDF (2916KB)(295)      

    Antiferromagnets offer considerable potential for electronic device applications. This article reviews recent demonstrations of spin manipulation in antiferromagnetic devices using applied electrical currents. Due to spin-orbit coupling in environments with particular crystalline or structural symmetries, the electric current can induce an effective magnetic field with a sign that alternates on the lengthscale of the unit cell. The staggered effective field provides an efficient mechanism for switching antiferromagnetic domains and moving antiferromagnetic domain walls, with writing speeds in the terahertz regime.

    Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures
    Zhen-Hua Wang(王振华), Xuan P A Gao(高翾), Zhi-Dong Zhang(张志东)
    Chin. Phys. B, 2018, 27 (10): 107901.   DOI: 10.1088/1674-1056/27/10/107901
    Abstract703)   HTML    PDF (2709KB)(791)      

    In this review article, the recent experimental and theoretical research progress in Bi2Se3- and Bi2Te3-based topological insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. The electrical transport properties are discussed for a few different types of topological insulator heterostructures, such as heterostructures formed by Bi2Se3- and Bi2Te3-based binary/ternary/quaternary compounds and superconductors, nonmagnetic and magnetic metals, or semiconductors.

    Recent spinterfacial studies targeted to spin manipulation in molecular spintronic devices
    Xian-Rong Gu(谷现荣), Li-Dan Guo(郭立丹), Xiang-Nan Sun(孙向南)
    Chin. Phys. B, 2018, 27 (10): 107202.   DOI: 10.1088/1674-1056/27/10/107202
    Abstract473)   HTML    PDF (3526KB)(334)      

    Molecular spintronics is an emerging field which evoked wide research attention since the first molecule-based spintronic device has been reported at 2002. Due to the active study over the last few years, it is found that the interfaces in spintronic device, so called spinterface, is of critical importance for many key issues in molecular spintronics, such as enhancing spin injection, lengthening spin transport distance, as well as manipulating spin signals in molecular spintronic devices. Here in this review, recent studies regarding spinterface in molecular devices, especially those impressive efforts devoted on spin manipulation, have been systematically summarized and discussed.