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Chin. Phys. B, 2017, Vol. 26(3): 037307    DOI: 10.1088/1674-1056/26/3/037307
Special Issue: TOPICAL REVIEW — 2D materials: physics and device applications
TOPICAL REVIEW—2D materials: physics and device applications Prev   Next  

Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices

Xuefei Li(李学飞)1, Xiong Xiong(熊雄)2, Yanqing Wu(吴燕庆)1,2
1 Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract  

Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for electronic and photonic applications due to its moderate bandgap, high carrier mobility, and unusual in-plane anisotropy. Here, we review recent progress in BP-based devices, such as field-effect transistors, contact resistance, quantum transport, stability, photodetector, heterostructure, and in-plane anisotropy. We also give our perspectives on future BP research directions.

Keywords:  black phosphorus      transistors      mobility      photodetector  
Received:  05 January 2017      Revised:  13 February 2017      Accepted manuscript online: 
PACS:  73.63.-b (Electronic transport in nanoscale materials and structures)  
  85.30.-z (Semiconductor devices)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404118, 61574066, and 61390504).

Corresponding Authors:  Yanqing Wu     E-mail:  yqwu@hust.edu.cn

Cite this article: 

Xuefei Li(李学飞), Xiong Xiong(熊雄), Yanqing Wu(吴燕庆) Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices 2017 Chin. Phys. B 26 037307

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