Dynamic resistive switching in a three-terminal device based on phase separated manganites

doi:10.1088/1674-1056/24/3/037101

Abstract A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state (HRS) to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.

Keywords: phase separation dielectrophoresis resistive switching memory device

Received: 04 June 2014
Revised: 10 October 2014
Accepted manuscript online:

PACS:	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	82.45.Un	(Dielectric materials in electrochemistry)
	81.30.Mh	(Solid-phase precipitation)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CB922101), the National Natural Science Foundation of China (Grant Nos. 51301084 and 11234005), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20130576), and Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT1243).

Corresponding Authors: Yan Zhi-Bo, Liu Jun-Ming
E-mail: zbyan@nju.edu.cn;liujm@nju.edu.cn

Cite this article:

Wang Zhi-Qiang (王志强), Yan Zhi-Bo (颜志波), Qin Ming-Hui (秦明辉), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明) Dynamic resistive switching in a three-terminal device based on phase separated manganites 2015 Chin. Phys. B 24 037101

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Dynamic resistive switching in a three-terminal device based on phase separated manganites

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