Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

doi:10.1088/1674-1056/24/11/117304

Abstract This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6×10^-6 Ω·cm² for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 ℃. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti₃SiC₂ dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti₃SiC₂ layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

Keywords: 4H-SiC p-type ohmic contact alloying step bunching

Received: 05 May 2015
Revised: 10 July 2015
Accepted manuscript online:

PACS:	73.40.Cg	(Contact resistance, contact potential)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)

Fund: Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).

Corresponding Authors: Zhang Yu-Ming
E-mail: zhangym@xidian.edu.cn

Cite this article:

Han Chao (韩超), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Guo Hui (郭辉), Wang Yue-Hu (王悦湖) Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface 2015 Chin. Phys. B 24 117304

[1]	Yuan H, Tang X Y, Zhang Y M, Zhang Y M, Song Q W, Yang F and Wu H;2014 Chin. Phys. B 23 057102
[2]	Chen S Z and Sheng K;2014 Chin. Phys. B 23 077201
[3]	Song Q W, Zhang Y M, Han J S, Tanner Philip, Dimitrijev Sima, Zhang Y M, Tang X Y and Guo H;2013 Chin. Phys. B 22 027302
[4]	http://www.cree.com/Power/Products
[5]	http://www.rohm.com/products/discrete/sic/
[6]	Jennings M R, Fisher C A, Walker D, Sanchez A, Pérez-Tomás A, Hamilton D P, Gammon P M, Burrows S E, Thomas S M, Sharma Y, Li F and Mawby P A 2014 Mater. Sci. Forum 778-780 693
[7]	Li S, Ahuja R, Barsoum M W, Jena P and Johansson B;2008 Appl. Phys. Lett. 92 221907
[8]	Johnson B J and Capano M A;2004 J. Appl. Phys. 95 5616
[9]	Gao M, Tsukimoto S, Goss S H, Tumakha S P, Onishi T, Murakami M and Brillson L J;2007 J. Electron. Mater. 36 277
[10]	Wang Z C, Tsukimoto S, Saito M, Ito K, Murakami M and Ikuhara Y;2009 Phys. Rev. B 80 245303
[11]	Wang Z C, Saito M, Tsukimoto S and Ikuhara Y;2012 J. Appl. Phys. 111 113717
[12]	Nakatsuka O, Takei T, Koide Y and Murakami M;2002 Mater. Trans. 43 1684
[13]	Laariedh F, Lazar M, Cremillieu P, Penuelas L, Leclercq J L and Planson D;2013 Semicond. Sci. Technol. 28 045007
[14]	Konishi R, Yasukochi R, Nakatsuka O, Koide Y, Moriyama M and Murakami M;2003 Mater. Sci. Eng. B 98 286
[15]	Crofton J, McMullin P G, Williams J R and Bozack M J;1995 J. Appl. Phys. 77 1317
[16]	Roccaforte F, Frazzetto A, Greco G, Giannazzo F, Fiorenza P, Nigro R L, Saggio M, Leszczynski M, Pristawko P and Raineri V;2012 Appl. Surf. Sci. 258 8324
[17]	Laariedh F, Lazar M, Cremillieu P, Leclercq J L and Planson D;2012 Mater. Sci. Forum 711 169
[18]	Frazzetto A, Giannazzo F, Nigro R L, Raineri V and Roccaforte F;2011 J. Phys. D: Appl. Phys. 44 255302
[19]	Wada K, Kimoto T, Nishikawa K and Matsunami H;2006 J. Cryst. Growth 291 370
[20]	Hori T, Danno K and Kimoto T;2007 J. Cryst. Growth 306 297
[21]	Li Z Y, Han P, Li Y, Ni W J, Bao H Q and Li Y Z;2011 Chin. Phys. Lett. 28 098101
[22]	Leone S, Pedersen H, Henry A, Kordina O and Janzén E;2009 J. Cryst. Growth 311 3265
[23]	Camarda M, La Magna A, Severino A and La Via F;2010 Thin Sol. Films 518 S159
[24]	Chien F R, Nutt S R, Yoo W S, Kimoto T and Matsunami H;1994 J. Mater. Res. 9 940
[25]	Veneroni A, Omarini F, Moscatelli D, Masi M, Leone S, Mauceri M, Pistone G and Abbondanza G;2005 J. Cryst. Growth 275 295
[26]	Powell J A, Petit J B, Edgar J H, Jenkins I G, Matus L G, Yang J W, Pirouz P, Choyke W J, Clemen L and Yoganathan M;1991 Appl. Phys. Lett. 59 333
[27]	Vang H, Lazar M, Brosselard P, Raynaud C, Cremillieu P, Leclercq J L, Bluet J M, Scharnholz S and Planson D;2006 Superlattice. Microst. 40 626
[28]	Afanas’ev V V;1999 Microelectron. Eng. 48 241
[29]	Dong L, Sun G S, Yu J, Zheng L, Liu X F, Zhang F, Yan G G, Li X G and Wang Z G;2013 Appl. Surf. Sci. 270 301
[30]	Thierry-Jebali N, Vo-Ha A, Carole D, Lazar M, Ferro G, Planson D, Henry A and Brosselard P;2013 Appl. Phys. Lett. 102 212108
[31]	Viala J C, Peillon N, Bosselet F and Bouix J;1997 Mater. Sci. Eng. A 229 95
[32]	Tsukimoto S, Ito K, Wang Z C, Saito M, Ikuhara Y and Murakami M;2009 Mater. Trans. 50 1071
[33]	Maneshian M H, Mahdak K C, Kuo F L, Hwang J Y, Banerjee R and Shepherd N D;2010 Appl. Phys. Lett. 97 024103
[34]	Pécz B, Tóth L, di Forte-Poisson M A and Vacas J;2003 Appl. Surf. Sci. 206 8

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Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

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