Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling

doi:10.1088/1674-1056/23/9/096801

Abstract An Al_0.2Ga_0.8N/AlN/Al_0.2Ga_0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate with a thick (>1 μm) GaN intermediate layer. The Al composition was determined by Rutherford backscattering (RBS). Using the channeling scan around an off-normal [1213] axis in the (1010) plane of the Al_0.2Ga_0.8N layer, the tetragonal distortion e_T, which is caused by the elastic strain in the epilayer, is investigated. The results show that e_T in the high-quality Al_0.2Ga_0.8N layer is dramatically released by the AlN interlayer from 0.66% to 0.27%.

Keywords: AlGaN Rutherford backscattering/channeling elastic strain

Received: 17 November 2013
Revised: 23 February 2014
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	73.61.Ey	(III-V semiconductors)
	82.80.Yc	(Rutherford backscattering (RBS), and other methods ofchemical analysis)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 91226202).

Corresponding Authors: Yao Shu-De
E-mail: sdyao@pku.edu.cn

Cite this article:

Wang Huan (王欢), Yao Shu-De (姚淑德) Characterization of tetragonal distortion in a thick Al_0.2Ga_0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling 2014 Chin. Phys. B 23 096801

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Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling

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Characterization of tetragonal distortion in a thick Al_0.2Ga_0.8N epilayer with an AlN interlayer by Rutherford backscattering/channeling