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Chin. Phys. B, 2014, Vol. 23(6): 068502    DOI: 10.1088/1674-1056/23/6/068502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

Zhuo Xiang-Jing, Zhang Jun, Li Dan-Wei, Yi Han-Xiang, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Chen Xin, Zhao Bi-Jun, Wang Wei-Li, Li Shu-Ti
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materialsand Technology, South China Normal University, Guangzhou 510631, China
Abstract  InGaN/AlInGaN superlattice (SL) is designed as the electron blocking layer (EBL) of an InGaN/GaN-based light-emitting diode (LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency (IQE), current-voltage (I-V) performance curve, light output-current (L-I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.
Keywords:  light-emitting diode      InGaN/AlInGaN superlattice      efficiency droop     
Received:  29 September 2013      Published:  15 June 2014
PACS:  85.60.Jb (Light-emitting devices)  
  8715.A-  
  78.60.Fi (Electroluminescence)  
  73.61.Ey (III-V semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 11A52091257).
Corresponding Authors:  Li Shu-Ti     E-mail:  lishuti@scnu.edu.cn

Cite this article: 

Zhuo Xiang-Jing, Zhang Jun, Li Dan-Wei, Yi Han-Xiang, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Chen Xin, Zhao Bi-Jun, Wang Wei-Li, Li Shu-Ti Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer 2014 Chin. Phys. B 23 068502

[1] Akyol F, Nath D N, Krishnamoorthy S, Park P S and Rajan S 2012 Appl. Phys. Lett. 100 111118
[2] Ling S C, Lu T C, Chang S P, Chen J R, Kuo H C and Wang S C 2010 Appl. Phys. Lett. 96 231101
[3] Shen Y C, Müller G O, Watanabe S, Gardner N F, Munkholm A and Krames M R 2007 Appl. Phys. Lett. 91 141101
[4] Gardner N F, Müller G O, Shen Y C, Chen G, Watanabe S, Gotz W and Krames M R 2007 Appl. Phys. Lett. 91 243506
[5] Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507
[6] Tong J H, Li S T, Liu T P, Liu C, Wang H L, Wu L J, Zhao B J, Wang X F and Chen X 2012 Chin. Phys. B 21 118502
[7] Xie J, Ni X, Fan Q, Shimada R, Ozgur U and Morkoc H 2008 Appl. Phys. Lett. 93 121107
[8] Wu L J, Li S T, Liu C, Wang H L, Lu T P, Zhang K, Xiao G W, Zhou Y G, Zheng S W, Yin Y A and Yang X D 2012 Chin. Phys. B 21 068506
[9] Monemar B and Sernelius B E 2007 Appl. Phys. Lett. 91 181103
[10] Wang C H, Chen J R, Chiu C H, Kuo C H, Li Y L, Lu T C and Wang S C 2010 IEEE Photon. Technol. Lett. 22 236
[11] David A, Grundmann M J, Kaeding J F, Gardner N F, Mihopoulos T G and Krames M R 2008 Appl. Phys. Lett. 92 053502
[12] Han S H, Lee D Y, Lee S J, Cho C Y, Kwon M K, Lee S P, Noh D Y, Kim D J, Kim Y C and Park S J 2009 Appl. Phys. Lett. 94 231123
[13] Wang C H, Ke C C, Lee C Y, Chang S P, Chang W T and Li J C 2010 Appl. Phys. Lett. 97 261103
[14] Wang T H and Xu J L 2013 Chin. Phys. B 22 088504
[15] Choi S, Kim H J, Kim S S, Liu J, Kim J, Ryou J H, Dupuis R D, Fischer A M and Ponce F A 2010 Appl. Phys. Lett. 96 221105
[16] Kuo Y K, Tsai M C and Yen S H 2009 Opt. Commun. 282 4252
[17] Gong C C, Fan G H, Zhang Y Y, Xu Y Q, Liu X P, Zheng S W, Yao G R and Zhou D T 2012 Chin. Phys. B 21 068505
[18] Liu C, Li S T, Lu T P, Wu L J, Yin Y A, Xiao G W, Zhou Y G and Wang H L 2012 IEEE Photon. Technol. Lett. 24 14
[19] See http://www.crosslight.com for more information about APSYS by Crosslight Software Inc., Burnaby, Canada
[20] Tong J H, Zhao B J, Wang X F, Chen X, Ren Z W, Li D W, Zhuo X J, Zhang J, Yi H X and Li S T 2013 Chin. Phys. B 22 068505
[21] Bernardini F 2007 in Nitride Semiconductor Devices: Principles and Simulation, ed. Piprek J (New York: Wiley), p. 4968
[22] Vurgaftman I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[23] Schubert E F, Grieshaber W and Goepfert I D 1996 Appl. Phys. Lett. 69 3737
[24] Simon J, Protasenko V, Lian C, Xing H and Jena D 2010 Science 327 60
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