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Chin. Phys. B, 2014, Vol. 23(10): 107803    DOI: 10.1088/1674-1056/23/10/107803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition

Xing Hai-Yinga b, Xu Zhang-Chenga, Cui Ming-Qib, Xie Yu-Xina, Zhang Guo-Yic
a School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China;
b Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China;
c Research Center for Wide-band Semiconductors, Peking University, Beijing 100871, China
Abstract  Metal-organic chemical vapor deposition (MOCVD) grown ferromagnetic GaMnN films are investigated by photoluminescence (PL) measurement with a mid-gap excitation wavelength of 405 nm. A sharp PL peak at 1.8 eV is found and the PL intensity successively decreases with the addition of Mn, in which the Mn concentration of sample A is below 1% ([Mn] A=0.75%) but its PL intensity is stronger than other samples'. The 1.8-eV PL peak is attributed to the recombination of electrons in the t2 state of the neutral Mn3+ acceptor with holes in the valence band. With Mn concentration increasing, the intensity of the PL peak decreases and the magnetic increment reduces in our samples. The correlation between the PL peak intensity and ferromagnetism of the samples is discussed in combination with the experimental results.
Keywords:  GaMnN      photoluminescence      magnetism      metal-organic chemical vapor deposition  
Received:  16 January 2014      Revised:  28 March 2014      Published:  15 October 2014
PACS:  78.55.-m (Photoluminescence, properties and materials)  
  78.30.Fs (III-V and II-VI semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204008, 11075176, and 60976090) and the National Key Basic Research Special Foundation of China (Grant No. 2013CB328705).
Corresponding Authors:  Xu Zhang-Cheng     E-mail:  zcxu@nankai.edu.cn
About author:  78.55.-m; 78.30.Fs

Cite this article: 

Xing Hai-Ying, Xu Zhang-Cheng, Cui Ming-Qi, Xie Yu-Xin, Zhang Guo-Yi Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition 2014 Chin. Phys. B 23 107803

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