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Chin. Phys. B, 2011, Vol. 20(8): 087101    DOI: 10.1088/1674-1056/20/8/087101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate

Hu Sheng-Donga, Zhang Bob, Luo Xiao-Rongb, Li Zhao-Jib, Wu Li-Juanc
a College of Communication Engineering, Chongqing University, Chongqing 400044, China vspace2mm; b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; c State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, Chin
Abstract  This paper proposes a new n+-charge island (NCI) P-channel lateral double diffused metal—oxide semiconductor (LDMOS) based on silicon epitaxial separation by implantation oxygen (E-SIMOX) substrate. Higher concentration self-adapted holes resulting from a vertical electric field are located in the spacing of two neighbouring n+ -regions on the interface of a buried oxide layer, and therefore the electric field of a dielectric buried layer (EI) is enhanced by these holes effectively, leading to an improved breakdown voltage (BV). The VB and EI of the NCI P-channel LDMOS increase to —188 V and 502.3 V/μm from -75 V and 82.2 V/μm of the conventional P-channel LDMOS with the same thicknesses SOI layer and the buried oxide layer, respectively. The influences of structure parameters on the proposed device characteristics are investigated by simulation. Moreover, compared with the conventional device, the proposed device exhibits low special on-resistance.
Keywords:  dielectric buried layer      breakdown voltage      self-adapted holes      epitaxy-SIMOX     
Received:  09 December 2010      Published:  15 August 2011
PACS:  71.10.-w (Theories and models of many-electron systems)  
  73.20.-r (Electron states at surfaces and interfaces)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  77.20.Jp  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the Fund of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

Cite this article: 

Wu Li-Juan, Hu Sheng-Dong, Zhang Bo, Luo Xiao-Rong, Li Zhao-Ji A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate 2011 Chin. Phys. B 20 087101

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