Effect of high temperature annealing on strain and band gap of GaN nanoparticles

doi:10.1088/1674-1056/19/8/086106

Abstract Black-coloured GaN nanoparticles with an average grain size of 50 nm have been obtained by annealing GaN nanoparticles under flowing nitrogen at 1200 $^\circ$C for 30 min. XRD measurement result indicates an increase in the lattice parameter of the GaN nanoparticles annealed at 1200 $^\circ$C, and HRTEM image shows that the increase cannot be ascribed to other ions in the interstitial positions. If the as-synthesised GaN nanoparticles at 950 $^\circ$C are regarded as standard, the thermal expansion changes nonlinearly with temperature and is anisotropic; the expansion below 1000 $^\circ$C is smaller than that above 1000 $^\circ$C. This study provides an experimental demonstration for selecting the proper annealing temperature of GaN. In addition, a large blueshift in optical bandgap of the annealed GaN nanoparticles at 1200 $^\circ$C is observed, which can be ascribed to the dominant transitions from the C($\Gamma$₇) with the peak energy at 3.532 eV.

Keywords: GaN nanoparticles thermal expansion strain blue shift bandgap

Received: 23 March 2009
Revised: 01 February 2010
Accepted manuscript online:

PACS:	61.72.Cc	(Kinetics of defect formation and annealing)
	61.46.Df	(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))
	61.72.J-	(Point defects and defect clusters)
	65.80.+n
	71.20.Nr	(Semiconductor compounds)
	78.55.Cr	(III-V semiconductors)

Fund: Project supported by the Excellent Young Scientist Awarding Fund of Shandong Province, China (Grant No. 2008BS04005), the China Postdoctoral Science Foundation (Grant No. 20080441141), and the Postdoctoral Innovation Program Special Fund of Shandong Province, China (Grant No. 200803054).

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Xiao Hong-Di(肖洪地), Mao Hong-Zhi(毛宏志), Lin Zhao-Jun(林兆军), and Ma Hong-Lei(马洪磊) Effect of high temperature annealing on strain and band gap of GaN nanoparticles 2010 Chin. Phys. B 19 086106

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Effect of high temperature annealing on strain and band gap of GaN nanoparticles

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