Please wait a minute...
Chin. Phys. B, 2010, Vol. 19(7): 075207    DOI: 10.1088/1674-1056/19/7/075207

Relation between space-charge-limiting current and electric field enhancement factor at curved surface cathode

Liu Guo-Zhi, Yang Zhan-Feng
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China Northwest Institute of Nuclear Technology, Xi'an 710024, China
Abstract  A two-dimensional solution of space-charge-limiting current for a high current vacuum diode with a spherical cathode is presented. The relation between space-charge-limiting current and electric field enhancement factor at the cathode surface for the diode with a curved surface cathode is also discussed. It is shown that compared with the current given by the conventional Child—Langmuir law, which describes the one-dimensional space-charege-limiting current, the two-dimensional space-charge-limiting current in such a diode is enhanced due to the electric-field enhancement along the cathode surface. Among practical parameter ranges, enhancement factor ηb approximately satisfies ηb ≈ Aβn, where β is the electric field enhancement factor at the cathode surface, and n is a constant between 1 and 2, which is confirmed to be universal for the diodes with curved surface cathodes.
Keywords:  diode      space-charge-limiting current      intense electron beam     
Received:  01 September 2009      Published:  15 July 2010
PACS:  52.75.Fk (Magnetohydrodynamic generators and thermionic convertors; plasma diodes)  

Cite this article: 

Liu Guo-Zhi, Yang Zhan-Feng Relation between space-charge-limiting current and electric field enhancement factor at curved surface cathode 2010 Chin. Phys. B 19 075207

[1] Lau Y Y 2001 Phys. Rev. Lett. 87 278301
[2] Rokhlenko A and Lebowitz J L 2003 Phys. Rev. Lett. 91 085002
[3] Umstatted R J and Luginsland J W 2001 Phys. Rev. Lett. bf 87 145002
[4] Watrous J J, Luginsland J W and Frese M H 2001 Phys. Plasmas 8 4202
[5] Luginsland J W, Lau Y Y and Gilgenbach R M 1996 Phys. Rev. Lett. 77 4668
[6] Liu G Z 2000 High Power Laser and Particle Beams 12 375 (in Chinese)
[7] Liu G Z and Shao H 2003 Chin. Phys. 12 204
[8] Billen J H and Young L M 1996 POISSON SUPERFISH, Los Alamos National Laboratory, Report LA-UR-96-1834
[9] Langmuir I and Compton K T 1931 Rev. Mod. Phys. 3 191
[10] See National Technical Information Service Document No. UCRL-77203 (In this paper a simple analytic model is used to derive a scaling relationship for beam pinch in rectangular and cylindrical geometries, and numerical calculations are presented to show the nonuniform electric fields.). Copies may be ordered from the National Technical Information Service, Springfield VA 22161
[11] Liu G Z, Qiu S, Wang H J, Huang W H and Wang F 1997 Intense Micrwave Pulse V In: SPIE bf3158 230
[1] Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications
Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰). Chin. Phys. B, 2020, 29(9): 098502.
[2] Total dose test with γ-ray for silicon single photon avalanche diodes
Qiaoli Liu(刘巧莉), Haiyan Zhang(张海燕), Lingxiang Hao(郝凌翔), Anqi Hu(胡安琪), Guang Wu(吴光), Xia Guo(郭霞). Chin. Phys. B, 2020, 29(8): 088501.
[3] Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure
Ke-Xiu Dong(董可秀), Dun-Jun Chen(陈敦军), Qing Cai(蔡青), Yan-Li liu(刘燕丽), Yu-Jie Wang(王玉杰). Chin. Phys. B, 2020, 29(8): 088502.
[4] High-performance frequency stabilization of ultraviolet diode lasers by using dichroic atomic vapor spectroscopy and transfer cavity
Danna Shen(申丹娜), Liangyu Ding(丁亮宇), Qiuxin Zhang(张球新), Chenhao Zhu(朱晨昊), Yuxin Wang(王玉欣), Wei Zhang(张威), Xiang Zhang(张翔). Chin. Phys. B, 2020, 29(7): 074210.
[5] Design of a novel high holding voltage LVTSCR with embedded clamping diode
Ling Zhu(朱玲), Hai-Lian Liang(梁海莲), Xiao-Feng Gu(顾晓峰), Jie Xu(许杰). Chin. Phys. B, 2020, 29(6): 068503.
[6] Design of NO2 photoacoustic sensor with high reflective mirror based on low power blue diode laser
Hua-Wei Jin(靳华伟), Pin-Hua Xie(谢品华), Ren-Zhi Hu(胡仁志), Chong-Chong Huang(黄崇崇), Chuan Lin(林川), Feng-Yang Wang(王凤阳). Chin. Phys. B, 2020, 29(6): 060701.
[7] Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination
Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科). Chin. Phys. B, 2020, 29(4): 047305.
[8] Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益). Chin. Phys. B, 2020, 29(4): 047802.
[9] Dark count in single-photon avalanche diodes: A novel statistical behavioral model
Wen-Juan Yu(喻文娟), Yu Zhang(张钰), Ming-Zhu Xu(许明珠), Xin-Miao Lu(逯鑫淼). Chin. Phys. B, 2020, 29(4): 048503.
[10] Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode
Jia-Feng Liu(刘家丰), Ning-Tao Zhang(张宁涛), Yan Teng(滕), Xiu-Jun Hao(郝修军), Yu Zhao(赵宇), Ying Chen(陈影), He Zhu(朱赫), Hong Zhu(朱虹), Qi-Hua Wu(吴启花), Xin Li(李欣), Bai-Le Chen(陈佰乐)§, and Yong Huang(黄勇). Chin. Phys. B, 2020, 29(11): 117301.
[11] Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes
Qian Chen(陈潜), Songhe Yang(杨松鹤), Lei Dong(董磊), Siyuan Cai(蔡思源), Jiaju Xu(许家驹), Zongxiang Xu(许宗祥). Chin. Phys. B, 2020, 29(1): 017302.
[12] Infrared light-emitting diodes based on colloidal PbSe/PbS core/shell nanocrystals
Byung-Ryool Hyun, Mikita Marus, Huaying Zhong(钟华英), Depeng Li(李德鹏), Haochen Liu(刘皓宸), Yue Xie(谢阅), Weon-kyu Koh, Bing Xu(徐冰), Yanjun Liu(刘言军), Xiao Wei Sun(孙小卫). Chin. Phys. B, 2020, 29(1): 018503.
[13] Diode-pumped Kerr-lens mode-locked Ti: sapphire laser with broad wavelength tunability
Han Liu(刘寒), Geyang Wang(王阁阳), Ke Yang(杨科), Renzhu Kang(康仁铸), Wenlong Tian(田文龙), Dacheng Zhang(张大成), Jiangfeng Zhu(朱江峰), Hainian Han(韩海年), Zhiyi Wei(魏志义). Chin. Phys. B, 2019, 28(9): 094213.
[14] Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
Xiaolong Cai(蔡小龙), Dong Zhou(周东), Liang Cheng(程亮), Fangfang Ren(任芳芳), Hong Zhong(钟宏), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海). Chin. Phys. B, 2019, 28(9): 098503.
[15] Monolithic semi-polar (1101) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate
Qi Wang(王琦), Guo-Dong Yuan(袁国栋), Wen-Qiang Liu(刘文强), Shuai Zhao(赵帅), Lu Zhang(张璐), Zhi-Qiang Liu(刘志强), Jun-Xi Wang(王军喜), Jin-Min Li(李晋闽). Chin. Phys. B, 2019, 28(8): 087802.
No Suggested Reading articles found!