Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

doi:10.1088/1674-1056/19/7/076101

Abstract C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30$^\circ$ rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.

Keywords: ZnO grain boundaries complex impedance spectra single crystalline and bi-crystalline thin films

Received: 08 September 2009
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	73.61.Ga	(II-VI semiconductors)
	68.55.-a	(Thin film structure and morphology)
	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)

Fund: Project partially supported by the National Natural Science Foundation of China (Grant No. 10804017), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2007118), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20070286037), the Cyanine-Project Foundation of Jiangsu Province of China (Grant No. 1107020060), the Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China (Grant No. 1107020070), and the New Century Excellent Talents in University (Grant No. NCET-05-0452).

Cite this article:

Lu Zhong-Lin(路忠林), Zou Wen-Qin(邹文琴), Xu Ming-Xiang(徐明祥), and Zhang Feng-Ming(张凤鸣) Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy 2010 Chin. Phys. B 19 076101

[1]	Cho S, Ma J, Kim Y, Sun Y, Wong G K L and Ketterson J B 1999 Appl. Phys. Lett. 75 2761
[2]	Cao H, Xu J Y, Seeling E W and Chang R P H 2000 Phys. Rev. Lett. 84 5584
[3]	Tsukazaki A, Ohotmo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu Shigefusa F, Fuke S, Segawa Y, Ohno H, Koinuma H and Kawasaki M 2005 Nat. Mater. 4 42
[4]	Sun H, Zhang Q F and Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese)
[5]	Look D C, Reynolds, Sizelove J R, Jones R L, Litton C W, Cantwell G and Harsch W C 1998 Solid State Commun. 105 399
[6]	Norton D P, Heo Y W, Ivill M P, Ip K, Pearton S J, Chisholm M F and Steiner T 2004 Mater. Today 7 34
[7]	Service 1997 Science 276 895
[8]	Dietl T, Ohno H, Matsukura F, Cubert J and Ferrand D 2000 Science 287 1019
[9]	Chen Y, Ko H J, Hong S K and Yao T 2000 Appl. Phys. Lett. 76 559
[10]	Cheng Z Q, Liu M H, Liu Y P, Chen W, Luo Z Q and Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese)
[11]	Liu M, Liu Z W, Gu J F, Qin F W, Ma C Y and Zhang Q Y 2008 Acta Phys. Sin. 57 1133 (in Chinese)
[12]	Zhou X, Wang S Q, Lian G J and Xiong G C 2006 Chin. Phys. 15 0199
[13]	Wang Z J, Song L J, Li S C, Lu Y M, Tian Y X, Liu J Y and Wang L Y 2006 Chin. Phys. 15 2710
[14]	"Ozg"ur "U, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Dovgan S, Avrutin V, Cho S J and Morkocc H 2005 J. Appl. Phys. 98 041301
[15]	Hong N H, Brize V and Sakai J 2005 Appl. Phys. Lett. 86 082505
[16]	Cao Q, Deng J X, Liu G L, Chen Y X, Yan S S and Mei L M 2007 Chin. Phys. Lett. 24 2951
[17]	Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara K, Tanabe T and Takasu H 2000 Appl. Phys. Lett. 77 1801
[18]	Orton J W and Powell M J 1980 Rep. Prog. Phys. 43 1263
[19]	Behan A J, Mokhtari A, Blythe H J, Score D, Xu X H, Neal J R, Fox A M and Gehring G A 2008 Phys. Rev. Lett. 100 047206
[20]	Shao R, Kalinin S V and Bonnell D A 2003 Appl. Phys. Lett. 82 1869
[21]	Ortega N, Kumar A, Bhattacharya P, Majumder S B and Katiyar R S 2008 Phys. Rev. B 77 014111
[22]	Hsu H S, Huang J C A, Chen S F and Liu C P 2007 Appl. Phys. Lett. 90 102506
[23]	Hsu C Y, Huang J C A, Lee Y H, Chen S F, Liu C P, Sun S J and Tzeng Yonhua 2009 Appl. Phys. Lett. 94 052504 endfootnotesize

[1]	Spectral shift of solid high-order harmonics from different channels in a combined laser field Dong-Dong Cao(曹冬冬), Xue-Fei Pan(潘雪飞), Jun Zhang(张军), and Xue-Shen Liu(刘学深). Chin. Phys. B, 2023, 32(3): 034204.
[2]	High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超)^†, and Mei-Ling Sun(孙美玲)^‡. Chin. Phys. B, 2022, 31(9): 098103.
[3]	Emerging of Ag particles on ZnO nanowire arrays for blue-ray hologram storage Ning Li(李宁), Xin Li(李鑫), Ming-Yue Zhang(张明越), Jing-Ying Miao(苗景迎), Shen-Cheng Fu(付申成), and Xin-Tong Zhang(张昕彤). Chin. Phys. B, 2022, 31(3): 036101.
[4]	Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier Yinzhe Liu(刘寅哲), Kewei Liu(刘可为), Jialin Yang(杨佳霖), Zhen Cheng(程祯), Dongyang Han(韩冬阳), Qiu Ai(艾秋), Xing Chen(陈星), Yongxue Zhu(朱勇学), Binghui Li(李炳辉), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2022, 31(10): 106101.
[5]	Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology Chi Sun(孙驰), Linyuan Zhao(赵林媛), Tingting Hao(郝婷婷), Renrong Liang(梁仁荣), Haitao Ye(叶海涛), Junjie Li(李俊杰), and Changzhi Gu(顾长志). Chin. Phys. B, 2022, 31(1): 016801.
[6]	Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films Qing-Fen Jiang(姜清芬), Jie Lian(连洁), Min-Ju Ying(英敏菊), Ming-Yang Wei(魏铭洋), Chen-Lin Wang(王宸琳), and Yu Zhang(张裕). Chin. Phys. B, 2021, 30(9): 097801.
[7]	Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Chin. Phys. B, 2021, 30(8): 087303.
[8]	Improved efficiency and stability of perovskite solar cells with molecular ameliorating of ZnO nanorod/perovskite interface and Mg-doping ZnO Zhenyun Zhang(张振雲), Lei Xu(许磊), and Junjie Qi(齐俊杰). Chin. Phys. B, 2021, 30(3): 038801.
[9]	In-situ fabrication of ZnO nanoparticles sensors based on gas-sensing electrode for ppb-level H₂S detection at room temperature Jing-Yue Xuan(宣景悦), Guo-Dong Zhao(赵国栋), Xiao-Bo Shi(史小波), Wei Geng(耿伟), Heng-Zheng Li(李恒征), Mei-Ling Sun(孙美玲), Fu-Chao Jia(贾福超), Shu-Gang Tan(谭树刚), Guang-Chao Yin(尹广超), and Bo Liu(刘波). Chin. Phys. B, 2021, 30(2): 020701.
[10]	Utilizing of high-pressure high-temperature synthesis to enhance the thermoelectric properties of Zn_0.98Al_0.02O with excellent electrical properties Qi Chen(陈启), Xinjian Li(李欣健), Yao Wang(王遥), Lijie Chang(常立杰), Jian Wang(王健), Yuewen Zhang(张跃文), Hongan Ma(马红安), and Xiaopeng Jia(贾晓鹏). Chin. Phys. B, 2021, 30(1): 016202.
[11]	High performance Cu₂O film/ZnO nanowires self-powered photodetector by electrochemical deposition Deshuang Guo(郭德双), Wei Li(李微), Dengkui Wang(王登魁), Bingheng Meng(孟兵恒), Dan Fang(房丹), Zhipeng Wei(魏志鹏). Chin. Phys. B, 2020, 29(9): 098504.
[12]	Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit Shan Gao(高珊), Chong-Yang Zhang(张重扬), Hong-Rui Ao(敖宏瑞), Hong-Yuan Jiang(姜洪源). Chin. Phys. B, 2020, 29(8): 088401.
[13]	Structural and optical characteristic features of RF sputtered CdS/ZnO thin films Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Chin. Phys. B, 2020, 29(8): 080702.
[14]	Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥). Chin. Phys. B, 2020, 29(4): 047102.
[15]	Erratum to “Indium doping effect on properties of ZnO nanoparticles synthesized by sol-gel method” S Mourad, J El Ghoul, K Omri, K Khirouni. Chin. Phys. B, 2020, 29(3): 039901.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

Cite this article:

Online attention