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Chin. Phys. B, 2010, Vol. 19(1): 017201    DOI: 10.1088/1674-1056/19/1/017201

Ab initio investigation of boron nanodevices: conductances of the different geometric conformations

Li Gui-Qin
Department of Physics, Tsinghua University, Beijing 100084, China
Abstract  Conductances of different geometric conformations of boron ribbon devices are calculated by the ab initio method. The I--V characteristics of three devices are rather different due to the difference in structure. The current of the hexagonal boron device is the largest and increases nonlinearly. The current of the hybrid hexagon-triangle boron device displays a large low-bias current and saturates at a value of about 5.2~μ A. The current of the flat triangular boron flake exhibits a voltage gap at low bias and rises sharply with increasing voltage. The flat triangular boron device can be either conducting or insulating, depending on the field.
Keywords:  conductance      different geometry conformation      boron  
Received:  20 May 2009      Revised:  13 June 2009      Published:  15 January 2010
PACS:  73.22.-f (Electronic structure of nanoscale materials and related systems)  
  61.46.Fg (Nanotubes)  
  71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))  
  85.35.Kt (Nanotube devices)  

Cite this article: 

Li Gui-Qin Ab initio investigation of boron nanodevices: conductances of the different geometric conformations 2010 Chin. Phys. B 19 017201

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