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Ab initio investigation of boron nanodevices: conductances of the different geometric conformations |
| Li Gui-Qin(李桂琴)† |
| Department of Physics, Tsinghua University, Beijing 100084, China |
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Abstract Conductances of different geometric conformations of boron ribbon devices are calculated by the ab initio method. The I--V characteristics of three devices are rather different due to the difference in structure. The current of the hexagonal boron device is the largest and increases nonlinearly. The current of the hybrid hexagon-triangle boron device displays a large low-bias current and saturates at a value of about 5.2 μA. The current of the flat triangular boron flake exhibits a voltage gap at low bias and rises sharply with increasing voltage. The flat triangular boron device can be either conducting or insulating, depending on the field.
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Received: 20 May 2009
Revised: 13 June 2009
Accepted manuscript online:
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PACS:
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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61.46.Fg
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(Nanotubes)
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71.15.Ap
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(Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))
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85.35.Kt
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(Nanotube devices)
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Cite this article:
Li Gui-Qin(李桂琴) Ab initio investigation of boron nanodevices: conductances of the different geometric conformations 2010 Chin. Phys. B 19 017201
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