Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors
Tian Xue-Yan(田雪雁), Xu Zheng(徐征)†, Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Xu-Rong(徐叙瑢), Yuan Guang-Cai(袁广才), Li Jing(李婧), Sun Qin-Jun(孙钦军), and Wang Ying(王赟)
Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044 China
Abstract In order to enhance the performance of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs), RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17×10-2 m2/(V$\cdot$s) by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150 ℃ for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00×10-2 cm2/(V$\cdot$s).
Received: 01 February 2009
Revised: 11 March 2009
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant Nos 10774013 and
10804006), the National High Technology Research and Development
Program of China (Grant No 2006AA03Z0412), the Research Fund for the
Doctoral Program of Higher Education of China (Grant No
20070004024), the Research Fund for the Youth Scholars of the
Doctoral Program of Higher Education (Grant No 20070004031), the
Beijing NOVA program (Grant No 2007A024), the the 111 of China
(Grant No B08002), and the research grants from the Academy of
Sciences for the Developing World.
Cite this article:
Tian Xue-Yan(田雪雁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Zhang Fu-Jun(张福俊), Xu Xu-Rong(徐叙瑢), Yuan Guang-Cai(袁广才), Li Jing(李婧), Sun Qin-Jun(孙钦军), and Wang Ying(王赟) Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly(3-hexylthiophene) field-effect transistors 2009 Chin. Phys. B 18 5078
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