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Chin. Phys. B, 2009, Vol. 18(11): 5015-5019    DOI: 10.1088/1674-1056/18/11/066
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effects of electron radiation on shielded space and triple-junction GaAs solar cells

Gao Xin(高欣), Yang Sheng-Sheng(杨生胜), Xue Yu-Xiong(薛玉雄), Li Kai(李凯),#br# Li Dan-Ming(李丹明), Wang Yi(王鹢), Wang Yun-Fei(王云飞), and Feng Zhan-Zu(冯展祖)
National Key Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou Institute of Physics, Chinese Academy of Space Technology, Lanzhou 730000, China
Abstract  The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP2/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose (Dd). One particular electron radiation environment, relative to a geosynchronous earth orbit (GEO), is chosen to calculate the total Dd behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.
Keywords:  nonionizing energy loss      displacement damage dose      solar cell  
Received:  20 August 2008      Revised:  26 May 2009      Accepted manuscript online: 
PACS:  84.60.Jt (Photoelectric conversion)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  61.80.Fe (Electron and positron radiation effects)  
Fund: Project supported by the National Key Laboratory for Vacuum \& Cryogenics Technology and Physics Foundation of China (Grant No 9140C5503060802) and the National High Technology Development Program of China (Grant No 2007AA042431).

Cite this article: 

Gao Xin(高欣), Yang Sheng-Sheng(杨生胜), Xue Yu-Xiong(薛玉雄), Li Kai(李凯), Li Dan-Ming(李丹明), Wang Yi(王鹢), Wang Yun-Fei(王云飞), and Feng Zhan-Zu(冯展祖) Effects of electron radiation on shielded space and triple-junction GaAs solar cells 2009 Chin. Phys. B 18 5015

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