Effects of electron radiation on shielded space and triple-junction GaAs solar cells

doi:10.1088/1674-1056/18/11/066

Abstract

Abstract The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP₂/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose (D_d). One particular electron radiation environment, relative to a geosynchronous earth orbit (GEO), is chosen to calculate the total D_d behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.

Keywords: nonionizing energy loss displacement damage dose solar cell

Received: 20 August 2008
Revised: 26 May 2009
Accepted manuscript online:

PACS:	84.60.Jt	(Photoelectric conversion)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	61.80.Fe	(Electron and positron radiation effects)

Fund: Project supported by the National Key Laboratory for Vacuum \& Cryogenics Technology and Physics Foundation of China (Grant No 9140C5503060802) and the National High Technology Development Program of China (Grant No 2007AA042431).

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Gao Xin(高欣), Yang Sheng-Sheng(杨生胜), Xue Yu-Xiong(薛玉雄), Li Kai(李凯), Li Dan-Ming(李丹明), Wang Yi(王鹢), Wang Yun-Fei(王云飞), and Feng Zhan-Zu(冯展祖) Effects of electron radiation on shielded space and triple-junction GaAs solar cells 2009 Chin. Phys. B 18 5015

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Effects of electron radiation on shielded space and triple-junction GaAs solar cells

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