|
|
Other articles related with "TCAD"：
|
|
16104 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
| |
|
Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect |
| |
|
|
Chin. Phys. B
2024 Vol.33 (1): 16104-16104
[Abstract]
(103)
[HTML 0 KB]
[PDF 2002 KB]
(14)
|
|
|
98503 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yahui Feng(冯亚辉), Yinong Liu(刘以农), Jinxin Zhang(张晋新), Jun Fu(付军), and Guofang Yu(喻国芳) |
| |
|
Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications |
| |
|
|
Chin. Phys. B
2023 Vol.32 (9): 98503-098503
[Abstract]
(148)
[HTML 1 KB]
[PDF 6512 KB]
(85)
|
|
|
76101 |
Yuan-Yuan Xue(薛院院), Zu-Jun Wang(王祖军), Wei Chen(陈伟), Xiao-Qiang Guo(郭晓强), Zhi-Bin Yao(姚志斌), Bao-Ping He(何宝平), Xu Nie(聂栩), Shankun Lai(赖善坤), Gang Huang(黄港), Jiang-Kun Sheng(盛江坤), Wu-Ying Ma(马武英), and Shi-Long Gou(缑石龙) |
| |
|
Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source |
| |
|
|
Chin. Phys. B
2023 Vol.32 (7): 76101-076101
[Abstract]
(136)
[HTML 0 KB]
[PDF 2269 KB]
(91)
|
|
|
68502 |
Rongxing Cao(曹荣幸), Kejia Wang(汪柯佳), Yang Meng(孟洋), Linhuan Li(李林欢), Lin Zhao(赵琳), Dan Han(韩丹), Yang Liu(刘洋), Shu Zheng(郑澍), Hongxia Li(李红霞), Yuqi Jiang(蒋煜琪), Xianghua Zeng(曾祥华), and Yuxiong Xue(薛玉雄) |
| |
|
Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs |
| |
|
|
Chin. Phys. B
2023 Vol.32 (6): 68502-068502
[Abstract]
(208)
[HTML 0 KB]
[PDF 1436 KB]
(94)
|
|
|
28504 |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平) |
| |
|
Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation |
| |
|
|
Chin. Phys. B
2023 Vol.32 (2): 28504-028504
[Abstract]
(316)
[HTML 1 KB]
[PDF 1582 KB]
(138)
|
|
|
128501 |
Manhong Zhang(张满红) and Wanchen Wu(武万琛) |
| |
|
An insulated-gate bipolar transistor model based on the finite-volume charge method |
| |
|
|
Chin. Phys. B
2022 Vol.31 (12): 128501-128501
[Abstract]
(412)
[HTML 0 KB]
[PDF 953 KB]
(46)
|
|
|
56106 |
Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰) |
| |
|
Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology |
| |
|
|
Chin. Phys. B
2022 Vol.31 (5): 56106-056106
[Abstract]
(473)
[HTML 1 KB]
[PDF 2993 KB]
(143)
|
|
|
38804 |
Ying Hu(胡颖), Jiaping Wang(王家平), Peng Zhao(赵鹏), Zhenhua Lin(林珍华), Siyu Zhang(张思玉), Jie Su(苏杰), Miao Zhang(张苗), Jincheng Zhang(张进成), Jingjing Chang(常晶晶), and Yue Hao(郝跃) |
| |
|
Reveal the large open-circuit voltage deficit of all-inorganicCsPbIBr2 perovskite solar cells |
| |
|
|
Chin. Phys. B
2022 Vol.31 (3): 38804-038804
[Abstract]
(441)
[HTML 1 KB]
[PDF 1390 KB]
(182)
|
|
|
18501 |
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Xiao-Yu Pan(潘霄宇), Yi-Tian Liu(柳奕天), Zhao-Qiao Gu(顾朝桥), An-An Ju(琚安安), and Xiao-Ping Ouyang(欧阳晓平) |
| |
|
Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET |
| |
|
|
Chin. Phys. B
2022 Vol.31 (1): 18501-018501
[Abstract]
(599)
[HTML 0 KB]
[PDF 2029 KB]
(178)
|
|
|
78501 |
Jia-Xin Wang(王加鑫), Xiao-Jing Li(李晓静), Fa-Zhan Zhao(赵发展), Chuan-Bin Zeng(曾传滨), Duo-Li Li(李多力), Lin-Chun Gao(高林春), Jiang-Jiang Li(李江江), Bo Li(李博), Zheng-Sheng Han(韩郑生), and Jia-Jun Luo(罗家俊) |
| |
|
Trigger mechanism of PDSOI NMOS devices for ESD protection operating under elevated temperatures |
| |
|
|
Chin. Phys. B
2021 Vol.30 (7): 78501-078501
[Abstract]
(568)
[HTML 1 KB]
[PDF 1734 KB]
(72)
|
|
|
70702 |
Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智) |
| |
|
A comparative study on radiation reliability of composite channel InP high electron mobility transistors |
| |
|
|
Chin. Phys. B
2021 Vol.30 (7): 70702-070702
[Abstract]
(492)
[HTML 1 KB]
[PDF 1188 KB]
(171)
|
|
|
67302 |
Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵) |
| |
|
Device topological thermal management of β-Ga2O3 Schottky barrier diodes |
| |
|
|
Chin. Phys. B
2021 Vol.30 (6): 67302-067302
[Abstract]
(498)
[HTML 1 KB]
[PDF 1138 KB]
(240)
|
|
|
27301 |
Tao Fang(房涛), Ling-Qi Li(李灵琪), Guang-Rui Xia(夏光睿), and Hong-Yu Yu(于洪宇) |
| |
|
Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes |
| |
|
|
Chin. Phys. B
2021 Vol.30 (2): 27301-0
[Abstract]
(857)
[HTML 1 KB]
[PDF 600 KB]
(408)
|
|
|
80701 |
Xin-Xing Fei(费新星), Ying Wang(王颖), Xin Luo(罗昕), Cheng-Hao Yu(于成浩) |
| |
|
Simulation study of high voltage GaN MISFETs with embedded PN junction |
| |
|
|
Chin. Phys. B
2020 Vol.29 (8): 80701-080701
[Abstract]
(563)
[HTML 0 KB]
[PDF 572 KB]
(136)
|
|
|
38501 |
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明) |
| |
|
Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation |
| |
|
|
Chin. Phys. B
2020 Vol.29 (3): 38501-038501
[Abstract]
(853)
[HTML 1 KB]
[PDF 964 KB]
(195)
|
|
|
76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
| |
|
Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
| |
|
|
Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
(642)
[HTML 1 KB]
[PDF 1215 KB]
(214)
|
|
|
68503 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏) |
| |
|
Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD |
| |
|
|
Chin. Phys. B
2019 Vol.28 (6): 68503-068503
[Abstract]
(648)
[HTML 1 KB]
[PDF 1876 KB]
(148)
|
|
|
77303 |
Fang-Lin Zheng(郑芳林), Cheng-Sheng Liu(刘程晟), Jia-Qi Ren(任佳琪), Yan-Ling Shi(石艳玲), Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进) |
| |
|
Analytical capacitance model for 14 nm FinFET considering dual-k spacer |
| |
|
|
Chin. Phys. B
2017 Vol.26 (7): 77303-077303
[Abstract]
(631)
[HTML 1 KB]
[PDF 1849 KB]
(605)
|
|
|
18501 |
Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯) |
| |
|
Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM |
| |
|
|
Chin. Phys. B
2017 Vol.26 (1): 18501-018501
[Abstract]
(875)
[HTML 1 KB]
[PDF 310 KB]
(443)
|
|
|
118501 |
Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉) |
| |
|
Scaling effects of single-event gate rupture in thin oxides |
| |
|
|
Chin. Phys. B
2013 Vol.22 (11): 118501-118501
[Abstract]
(638)
[HTML 1 KB]
[PDF 378 KB]
(389)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
