Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(11): 118501    DOI: 10.1088/1674-1056/22/11/118501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Scaling effects of single-event gate rupture in thin oxides

Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉)
Northwest Institute of Nuclear Technology, Xi’an 710024, China
Abstract  The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The value of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period (12 nm to 3.3 nm), and then increases a little when the gate oxide becomes thinner and thinner (3.3 nm to 1.8 nm).
Keywords:  single-event gate rupture (SEGR)      heavy ion      thin oxides      TCAD simulation  
Received:  21 March 2013      Revised:  18 April 2013      Accepted manuscript online: 
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  61.80.-x (Physical radiation effects, radiation damage)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Corresponding Authors:  Ding Li-Li     E-mail:  lili03.ding@gmail.com

Cite this article: 

Ding Li-Li (丁李利), Chen Wei (陈伟), Guo Hong-Xia (郭红霞), Yan Yi-Hua (闫逸华), Guo Xiao-Qiang (郭晓强), Fan Ru-Yu (范如玉) Scaling effects of single-event gate rupture in thin oxides 2013 Chin. Phys. B 22 118501

[1] Swift G M and Katz R 1996 IEEE Trans. Nucl. Sci. 43 967
[2] Lum G K, Boruta N, Baker J M, Robinette L, Shaneyfelt M R, Schwank J R, Dodd P E and Felix J A 2004 IEEE Trans. Nucl. Sci. 51 3263
[3] Silvestri M, Gerardin S, Paccagnella A and Ghidini G 2009 IEEE Trans. Nucl. Sci. 56 1964
[4] Silvestri M, Gerardin S, Faccio F and Paccagnella A 2010 IEEE Trans. Nucl. Sci. 57 1842
[5] Tang B Q, Wang Y P, Geng B, Chen X H, He C H and Yang H L 2000 Atomic Energy Science and Technology 34 339 (in Chinese)
[6] Titus J L, Su Y S, Savage M W, Mickevicius R V and Wheatley C F 2003 IEEE Trans. Nucl. Sci. 50 2256
[7] Tang Z H, Hu G Y, Chen G B, Tan K Z, Liu Y, Luo J and Xu X L 2012 J. Semicond. 33 044002
[8] Wang L X, Lu J, Liu G, Wang C L, Teng R, Han Z S and Xia Y 2012 J. Semicond. 33 054008
[9] He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H and Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese)
[10] Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2010 Acta Phys. Sin. 59 649 (in Chinese)
[11] Zhang K Y, Guo H X, Luo Y H, Fan R Y, Chen W, Lin D S, Guo G and Yan Y H 2011 Chin. Phys. B 20 068501
[12] Titus J L, Wheatley C F, Burton D I, Mouret I, Allenspach M, Brews J, Schrimpf R, Galloway K and Pease R L 1995 IEEE Trans. Nucl. Sci. 42 1928
[13] Sexton F W, Fleetwood D M, Shaneyfelt M R, Dodd P E and Hash G L 1997 IEEE Trans. Nucl. Sci. 44 2345
[14] Boruta N, Lum G K, Donnel H O, Robinette L, Shaneyfelt M R and Schwank J R 2001 IEEE Trans. Nucl. Sci. 48 1917
[15] Jaffe G 1913 Ann. Phys. 42 303
[16] Oldham T R and McGarrity M 1981 IEEE Trans. Nucl. Sci. 28 3975
[17] Grubin H L, Kreskovsky J P and Weinberg B C 1984 IEEE Trans. Nucl. Sci. 31 1164
[18] Ma T P and Dressendorfer 1989 Ionizing Radiation Effects in MOS Devices and Circuits (Wiley-Interscience Publication)
[19] Hughes R C 1978 Solid-State Electron. 21 251
[1] Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[2] Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology
Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰). Chin. Phys. B, 2022, 31(5): 056106.
[3] An insulated-gate bipolar transistor model based on the finite-volume charge method
Manhong Zhang(张满红) and Wanchen Wu(武万琛). Chin. Phys. B, 2022, 31(12): 128501.
[4] Lattice damage in InGaN induced by swift heavy ion irradiation
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞). Chin. Phys. B, 2022, 31(10): 106103.
[5] Device topological thermal management of β-Ga2O3 Schottky barrier diodes
Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵). Chin. Phys. B, 2021, 30(6): 067302.
[6] Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation
Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Chin. Phys. B, 2021, 30(5): 056110.
[7] Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明). Chin. Phys. B, 2020, 29(3): 038501.
[8] Investigation of single event effect in 28-nm system-on-chip with multi patterns
Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏)†, Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), and Heng An(安恒). Chin. Phys. B, 2020, 29(10): 108504.
[9] Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏). Chin. Phys. B, 2019, 28(6): 068503.
[10] Vibrational modes in La2Zr2O7 pyrochlore irradiated with disparate electrical energy losses
Sheng-Xia Zhang(张胜霞), Jie Liu(刘杰), Hua Xie(谢华), Li-Jun Xu(徐丽君), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Wen-Si Ai(艾文思), Peng-Fei Zhai(翟鹏飞). Chin. Phys. B, 2019, 28(11): 116102.
[11] Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory
Jin-Shun Bi(毕津顺), Kai Xi(习凯), Bo Li(李博), Hai-Bin Wang(王海滨), Lan-Long Ji(季兰龙), Jin Li(李金), Ming Liu(刘明). Chin. Phys. B, 2018, 27(9): 098501.
[12] Influences of total ionizing dose on single event effect sensitivity in floating gate cells
Ya-Nan Yin(殷亚楠), Jie Liu(刘杰), Qing-Gang Ji(姬庆刚), Pei-Xiong Zhao(赵培雄), Tian-Qi Liu(刘天奇), Bing Ye(叶兵), Jie Luo(罗捷), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东). Chin. Phys. B, 2018, 27(8): 086103.
[13] Structural modification in swift heavy ion irradiated muscovite mica
Sheng-Xia Zhang(张胜霞), Jie Liu(刘杰), Jian Zeng(曾健), Pei-Pei Hu(胡培培), Peng-Fei Zhai(翟鹏飞). Chin. Phys. B, 2017, 26(10): 106102.
[14] Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM
Xiao-Yu Pan(潘霄宇), Hong-Xia Guo(郭红霞), Yin-Hong Luo(罗尹虹), Feng-Qi Zhang(张凤祁), Li-Li Ding(丁李利), Jia-Nan Wei(魏佳男), Wen Zhao(赵雯). Chin. Phys. B, 2017, 26(1): 018501.
[15] X-ray emission from 424-MeV/u C ions impacting on selected target
Xian-Ming Zhou(周贤明), Rui Cheng(程锐), Yu Lei(雷瑜), Yuan-Bo Sun(孙渊博), Yu-Yu Wang(王瑜玉), Xing Wang(王兴), Ge Xu(徐戈), Ce-Xiang Mei(梅策香), Xiao-An Zhang(张小安), Xi-Meng Chen(陈熙萌), Guo-Qing Xiao(肖国青), Yong-Tao Zhao(赵永涛). Chin. Phys. B, 2016, 25(2): 023402.
No Suggested Reading articles found!