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Other articles related with "MOCVD"：
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37303 |
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process |
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Chin. Phys. B
2023 Vol.32 (3): 37303-037303
[Abstract]
(240)
[HTML 1 KB]
[PDF 836 KB]
(131)
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16701 |
Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华) |
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Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation |
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Chin. Phys. B
2023 Vol.32 (1): 16701-016701
[Abstract]
(224)
[HTML 1 KB]
[PDF 2258 KB]
(114)
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88503 |
Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华) |
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A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response |
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Chin. Phys. B
2022 Vol.31 (8): 88503-088503
[Abstract]
(296)
[HTML 0 KB]
[PDF 1281 KB]
(105)
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38103 |
Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘) |
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Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD |
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Chin. Phys. B
2022 Vol.31 (3): 38103-038103
[Abstract]
(444)
[HTML 1 KB]
[PDF 3764 KB]
(286)
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118101 |
Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮) |
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Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si |
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Chin. Phys. B
2021 Vol.30 (11): 118101-118101
[Abstract]
(459)
[HTML 1 KB]
[PDF 1911 KB]
(112)
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57301 |
Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华) |
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High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film |
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Chin. Phys. B
2021 Vol.30 (5): 57301-057301
[Abstract]
(463)
[HTML 1 KB]
[PDF 2894 KB]
(194)
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58103 |
Qing-Jun Xu(徐庆君), Shi-Ying Zhang(张士英), Bin Liu(刘斌), Zhen-Hua Li(李振华), Tao Tao(陶涛), Zi-Li Xie(谢自力), Xiang-Qian Xiu(修向前), Dun-Jun Chen(陈敦军), Peng Chen(陈鹏), Ping Han(韩平), Ke Wang(王科), Rong Zhang(张荣), You-Liao Zheng(郑有炓) |
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Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys |
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Chin. Phys. B
2020 Vol.29 (5): 58103-058103
[Abstract]
(723)
[HTML 1 KB]
[PDF 476 KB]
(168)
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68104 |
Qi-Chang Hu(胡启昌), Kai Ding(丁凯) |
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Magnesium incorporation efficiencies in MgxZn1-xO films on ZnO substrates grown by metalorganic chemical vapor deposition |
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Chin. Phys. B
2017 Vol.26 (6): 68104-068104
[Abstract]
(575)
[HTML 1 KB]
[PDF 1695 KB]
(262)
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27801 |
Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2017 Vol.26 (2): 27801-027801
[Abstract]
(800)
[HTML 1 KB]
[PDF 2722 KB]
(314)
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118506 |
Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢) |
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High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer |
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Chin. Phys. B
2016 Vol.25 (11): 118506-118506
[Abstract]
(735)
[HTML 0 KB]
[PDF 866 KB]
(320)
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67503 |
Hai-Ying Xing(邢海英), Yu Chen(陈雨), Chen Ji(纪骋), Sheng-Xiang Jiang(蒋盛翔), Meng-Yao Yuan(苑梦尧), Zhi-Ying Guo(郭志英), Kun Li(李琨), Ming-Qi Cui(崔明启), Guo-Yi Zhang(张国义) |
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Role of vacancy-type defects in magnetism of GaMnN |
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Chin. Phys. B
2016 Vol.25 (6): 67503-067503
[Abstract]
(604)
[HTML 1 KB]
[PDF 845 KB]
(264)
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38101 |
Shu-Zhen Yu(于淑珍), Jian-Rong Dong(董建荣), Yu-Run Sun(孙玉润), Kui-Long Li(李奎龙),Xu-Lu Zeng(曾徐路), Yong-Ming Zhao(赵勇明), Hui Yang(杨辉) |
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Control of symmetric properties of metamorphic In0.27Ga0.73As layers by substrate misorientation |
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Chin. Phys. B
2016 Vol.25 (3): 38101-038101
[Abstract]
(592)
[HTML 1 KB]
[PDF 1759 KB]
(288)
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28103 |
Feng Guo(郭峰), Xin-Sheng Wang(汪薪生), Shi-Wei Zhuang(庄仕伟), Guo-Xing Li(李国兴), Bao-Lin Zhang(张宝林), Pen-Chu Chou(周本初) |
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Nanodots and microwires of ZrO2 grown on LaAlO3 by photo-assisted metal-organic chemical vapor deposition |
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Chin. Phys. B
2016 Vol.25 (2): 28103-028103
[Abstract]
(665)
[HTML 1 KB]
[PDF 3756 KB]
(414)
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87305 |
Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美) |
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Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications |
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Chin. Phys. B
2015 Vol.24 (8): 87305-087305
[Abstract]
(712)
[HTML 1 KB]
[PDF 574 KB]
(401)
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128102 |
Huang Jie (黄杰), Li Ming (黎明), Tang Chak-Wah (邓泽华), Lau Kei-May (刘纪美) |
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Lg=100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD |
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Chin. Phys. B
2014 Vol.23 (12): 128102-128102
[Abstract]
(675)
[HTML 1 KB]
[PDF 1533 KB]
(573)
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128503 |
Li Jun-Shuai (李军帅), Zhang Xia (张霞), Yan Xin (颜鑫), Chen Xiong (陈雄), Li Liang (李亮), Cui Jian-Gong (崔建功), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏) |
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Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays |
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Chin. Phys. B
2014 Vol.23 (12): 128503-128503
[Abstract]
(678)
[HTML 1 KB]
[PDF 2390 KB]
(463)
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88110 |
Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Yang Hao-Yu (杨皓宇), Lü You (吕游), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林) |
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Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (8): 88110-088110
[Abstract]
(586)
[HTML 1 KB]
[PDF 2173 KB]
(365)
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16101 |
Li Jun-Ze (李俊泽), Tao Yue-Bin (陶岳彬), Chen Zhi-Zhong (陈志忠), Jiang Xian-Zhe (姜显哲), Fu Xing-Xing (付星星), Jiang Shuang (姜爽), Jiao Qian-Qian (焦倩倩), Yu Tong-Jun (于彤军), Zhang Guo-Yi (张国义) |
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Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template |
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Chin. Phys. B
2014 Vol.23 (1): 16101-016101
[Abstract]
(539)
[HTML 1 KB]
[PDF 533 KB]
(571)
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78402 |
Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) |
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Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells |
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Chin. Phys. B
2013 Vol.22 (7): 78402-078402
[Abstract]
(848)
[HTML 1 KB]
[PDF 2267 KB]
(779)
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57802 |
Zhao De-Gang(赵德刚), Zhang Shuang(张爽), Liu Wen-Bao(刘文宝), Hao Xiao-Peng(郝小鹏), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Yang Hui(杨辉), and Wei Long(魏龙) |
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Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors |
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Chin. Phys. B
2010 Vol.19 (5): 57802-057802
[Abstract]
(1267)
[HTML 1 KB]
[PDF 327 KB]
(915)
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5072 |
Li Zhi-Ming(李志明),Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Xu Sheng-Rui(许晟瑞), Ni Jin-Yu(倪金玉), and Zhou Xiao-Wei(周小伟) |
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Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor |
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Chin. Phys. B
2009 Vol.18 (11): 5072-5077
[Abstract]
(1643)
[HTML 1 KB]
[PDF 946 KB]
(350)
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320 |
Yan Jun-Feng(闫军锋), Wang Tao(汪韬), Wang Jing-Wei (王警卫), Zhang Zhi-Yong(张志勇), and Zhao Wu(赵武) |
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Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition |
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Chin. Phys. B
2009 Vol.18 (1): 320-323
[Abstract]
(1153)
[HTML 1 KB]
[PDF 2342 KB]
(1316)
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2292 |
Liu Ci-Hui(刘磁辉), Liu Bing-Ce(刘秉策), and Fu Zhu-Xi(付竹西) |
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Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition |
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Chin. Phys. B
2008 Vol.17 (6): 2292-2296
[Abstract]
(1534)
[HTML 1 KB]
[PDF 199 KB]
(681)
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1114 |
Liang Song (梁松), Zhu Hong-Liang (朱洪亮), Pan Jiao-Qing (潘教青), Wang Wei (王圩) |
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Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD |
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Chin. Phys. B
2006 Vol.15 (5): 1114-1119
[Abstract]
(1166)
[HTML 0 KB]
[PDF 1163 KB]
(542)
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