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Published in last 1 year |  In last 2 years |  In last 3 years |  All Please wait a minute... For selected: Download citations EndNote Ris BibTeX Toggle thumbnails Select Bioinspired tactile perception platform with information encryption function Zhi-Wen Shi(石智文), Zheng-Yu Ren(任征宇), Wei-Sheng Wang(王伟胜), Hui Xiao(肖惠), Yu-Heng Zeng(曾俞衡), and Li-Qiang Zhu(竺立强) Chin. Phys. B, 2022, 31 (9): 098506.   DOI: 10.1088/1674-1056/ac7a15 Abstract （752）   HTML （7）    PDF （3270KB）（326）       Knowledge map    Mimicking tactile perception is critical to the development of advanced interactive neuromorphic platforms. Inspired by cutaneous perceptual functions, a bionic tactile perceptual platform is proposed. PDMS-based tactile sensors act as bionic skin touch receptors. Flexible indium tin oxide neuromorphic transistors fabricated with a single-step mask processing act as artificial synapses. Thus, the tactile perceptual platform possesses the ability of information processing. Interestingly, the flexible tactile perception platform can find applications in information encryption and decryption. With adoption of cipher, signal transmitted by the perception platform is encrypted. Thus, the security of information transmission is effectively improved. The flexible tactile perceptual platform would have potentials in cognitive wearable devices, advanced human-machine interaction system, and intelligent bionic robots. Select Bottom-up design and assembly with superatomic building blocks Famin Yu(于法民), Zhonghua Liu(刘中华), Jiarui Li(李佳芮), Wanrong Huang(黄婉蓉), Xinrui Yang(杨欣瑞), and Zhigang Wang(王志刚) Chin. Phys. B, 2022, 31 (12): 128107.   DOI: 10.1088/1674-1056/ac9e97 Abstract （731）   HTML （8）    PDF （1170KB）（554）       Knowledge map    Constructing specific structures from the bottom up with artificial units is an important interdisciplinary topic involving physics, chemistry, materials, and so on. In this work, we theoretically demonstrated the feasibility of using superatoms as building blocks to assemble a complex at atomic-level precision. By using a series of actinide-based endohedral metallofullerene (EMF) superatoms that can form one, two, three and four chemical bonds, a planar complex with intra- and inter-molecular interactions was assembled on the Au(111) surface. This complex is composed of two parts, containing ten and eight superatoms, respectively. The electronic structure analysis shows that the electron density inside each part is connected and the closed-shell electronic arrangement system is designed. There is also an obvious van der Waals boundary by physical adsorption between the two parts, and a stable complex is formed. Since this complex is realized by the first-principles calculations of quantum mechanics, our results help not only achieve atomic-level precision construction with artificial superatomic units but also maintain atomic-level functional properties. Select Transmissive 2-bit anisotropic coding metasurface Pengtao Lai(来鹏涛), Zenglin Li(李增霖), Wei Wang(王炜), Jia Qu(曲嘉), Liangwei Wu(吴良威),Tingting Lv(吕婷婷), Bo Lv(吕博), Zheng Zhu(朱正), Yuxiang Li(李玉祥),Chunying Guan(关春颖), Huifeng Ma(马慧锋), and Jinhui Shi(史金辉) Chin. Phys. B, 2022, 31 (9): 098102.   DOI: 10.1088/1674-1056/ac4a6b Abstract （697）   HTML （1）    PDF （2420KB）（175）       Knowledge map    Coding metasurfaces have attracted tremendous interests due to unique capabilities of manipulating electromagnetic wave. However, archiving transmissive coding metasurface is still challenging. Here we propose a transmissive anisotropic coding metasurface that enables the independent control of two orthogonal polarizations. The polarization beam splitter and the orbital angular momentum (OAM) generator have been studied as typical applications of the anisotropic 2-bit coding metasurface. The simulated far field patterns illustrate that the x and y polarized electromagnetic waves are deflected into two different directions, respectively. The anisotropic coding metasurface has been experimentally verified to realize an OAM beam with l = 2 of right-handed polarized wave, resulting from both contributions from linear-to-circular polarization conversion and the phase profile modulation. This work is beneficial to enrich the polarization manipulation field and develop transmissive coding metasurfaces. Select An insulated-gate bipolar transistor model based on the finite-volume charge method Manhong Zhang(张满红) and Wanchen Wu(武万琛) Chin. Phys. B, 2022, 31 (12): 128501.   DOI: 10.1088/1674-1056/ac8723 Abstract （610）   HTML （0）    PDF （953KB）（110）       Knowledge map    A finite-volume charge method has been proposed to simulate PIN diodes and insulated-gate bipolar transistor (IGBT) devices using SPICE simulators by extending the lumped-charge method. The new method assumes local quasi-neutrality in the undepleted N- base region and uses the total collector current, the nodal hole density and voltage as the basic quantities. In SPICE implementation, it makes clear and accurate definitions of three kinds of nodes — the carrier density nodes, the voltage nodes and the current generator nodes — in the undepleted N- base region. It uses central finite difference to approximate electron and hole current generators and sets up the current continuity equation in a control volume for every carrier density node in the undepleted N- base region. It is easy to increase the number of nodes to describe the fast spatially varying carrier density in transient processes. We use this method to simulate IGBT devices in SPICE simulators and get a good agreement with technology computer-aided design simulations. Select Optical simulation of CsPbI3/TOPCon tandem solar cells with advanced light management Min Yue(岳敏), Yan Wang(王燕), Hui-Li Liang(梁会力), and Zeng-Xia Mei (梅增霞) Chin. Phys. B, 2022, 31 (8): 088801.   DOI: 10.1088/1674-1056/ac693d Abstract （608）   HTML （17）    PDF （1617KB）（299）       Knowledge map    Monolithic perovskite/Si tandem solar cells (TSCs) have experienced rapid development in recent years, demonstrating its potential to exceed the Shockley-Queisser limit of single junction Si solar cells. Unlike typical organic-inorganic hybrid perovskite/silicon heterojunction TSCs, here we propose CsPbI3/TOPCon TSC, which is a promising architecture in consideration of its pleasurable thermal stability and good compatibility with current PERC production lines. The optical performance of CsPbI3/TOPCon TSCs is simulated by the combination of ray-tracing method and transfer matrix method. The light management of the CsPbI3/TOPCon TSC begins with the optimization of the surface texture on Si subcell, indicating that a bifacial inverted pyramid with a small bottom angle of rear-side enables a further minimization of the optical losses. Current matching between the subcells, as well as the parasitic absorption loss from the front transparent conductive oxide, is analyzed and discussed in detail. Finally, an optimized configuration of CsPbI3/TOPCon TSC with a 31.78% power conversion efficiency is proposed. This work provides a practical guidance for approaching high-efficiency perovskite/Si TSCs. Select Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field Yilin Li(李屹林), Hui Zhu(朱慧), Rui Li(李锐), Jie Liu(柳杰), Jinjuan Xiang(项金娟), Na Xie(解娜), Zeng Huang(黄增), Zhixuan Fang(方志轩), Xing Liu(刘行), and Lixing Zhou(周丽星) Chin. Phys. B, 2022, 31 (8): 088502.   DOI: 10.1088/1674-1056/ac5977 Abstract （579）   HTML （5）    PDF （866KB）（186）       Knowledge map    We examined the wake-up effect in a TiN/Hf0.4Zr0.6O2/TiN structure. The increased polarization was affected by the cumulative duration of a switched electric field and the single application time of the field during each switching cycle. The space-charge-limited current was stable, indicating that the trap density did not change during the wake-up. The effective charge density in the space-charge region was extracted from capacitance-voltage curves, which demonstrated an increase in free charges at the interface. Based on changing characteristics in these properties, the wake-up effect can be attributed to the redistribution of oxygen vacancies under the electric field. Select High performance SiC trench-type MOSFET with an integrated MOS-channel diode Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏) Chin. Phys. B, 2023, 32 (2): 028503.   DOI: 10.1088/1674-1056/ac7cd5 Abstract （574）   HTML （6）    PDF （1793KB）（592）       Knowledge map    A novel SiC double-trench metal-oxide-semiconductor field effect transistor (MOSFET) with integrated MOS-channel diode is proposed and investigated by Sentaurus TCAD simulation. The new SiC MOSFET has a trench gate and a stepped-trench source, and features an integrated MOS-channel diode on the top sidewall of the source trench (MT MOS). In the reverse conduction state, the MOS-channel diode turns on firstly to prevent the internal parasitic body diode being activated, and thus reduces the turn-on voltage $V_{\rm F}$ and suppresses the bipolar degradation phenomena. The $V_{\rm F}$ of 1.70 V (@$I_{\rm ds} = -100$ A/cm$^{2}$) for the SiC MT MOS is 38.2% lower than that of SiC double-trench MOSFET (DT MOS). Meanwhile, the reverse recovery charge $Q_{\rm rr}$ of the MT MOS is 58.7% lower than that of the DT MOS at $I_{\rm load} = 700$ A/cm$^{2}$, and thus the reverse recovery loss is reduced. Furthermore, owing to the modulation effect induced by the double trenches, the MT MOS preserves the same superior forward conduction and blocking performance as those of DT MOS, with 22.9% and 18.2% improvement on breakdown voltage and $R_{\rm ON,sp}$ compared to the trench gate MOSFET with planar integrated SBD (ST MOS). Select X-ray phase-sensitive microscope imaging with a grating interferometer: Theory and simulation Jiecheng Yang(杨杰成), Peiping Zhu(朱佩平), Dong Liang(梁栋), Hairong Zheng(郑海荣), and Yongshuai Ge(葛永帅) Chin. Phys. B, 2022, 31 (9): 098702.   DOI: 10.1088/1674-1056/ac600e Abstract （571）   HTML （0）    PDF （1105KB）（129）       Knowledge map    A general theoretical framework is presented to explain the formation of the phase signal in an x-ray microscope integrated with a grating interferometer, which simultaneously enables the high spatial resolution imaging and the improved image contrast. By using this theory, several key parameters of phase contrast imaging can be predicted, for instance, the fringe visibility and period, and the conversion condition from the differential phase imaging (DPI) to the phase difference imaging (PDI). Additionally, numerical simulations are performed with certain x-ray optical components and imaging geometry. Comparison with the available experimental measurement [Appl. Phys. Lett. 113 063105 (2018)] demonstrates the accuracy of this developed quantitative analysis method of x-ray phase-sensitive microscope imaging. Select Determination of band alignment between GaOx and boron doped diamond for a selective-area-doped termination structure Qi-Liang Wang(王启亮), Shi-Yang Fu(付诗洋), Si-Han He(何思翰), Hai-Bo Zhang(张海波),Shao-Heng Cheng(成绍恒), Liu-An Li(李柳暗), and Hong-Dong Li(李红东) Chin. Phys. B, 2022, 31 (8): 088104.   DOI: 10.1088/1674-1056/ac464e Abstract （563）   HTML （2）    PDF （1217KB）（117）       Knowledge map    An n-GaOx thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction. The n-GaOx thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties. The GaOx/diamond heterojunction shows a type-II staggered band configuration, where the valence and conduction band offsets are 1.28 eV and 1.93 eV, respectively. These results confirm the feasibility of the use of n-GaOx as a termination structure for diamond power devices. Select Effect of a static pedestrian as an exit obstacle on evacuation Yang-Hui Hu(胡杨慧), Yu-Bo Bi(毕钰帛), Jun Zhang(张俊), Li-Ping Lian(练丽萍), Wei-Guo Song(宋卫国), and Wei Gao(高伟) Chin. Phys. B, 2023, 32 (1): 018901.   DOI: 10.1088/1674-1056/ac9605 Abstract （559）   HTML （0）    PDF （2788KB）（267）       Knowledge map    Building exit as a bottleneck structure is the last and the most congested stage in building evacuation. It is well known that obstacles at the exit affect the evacuation process, but few researchers pay attention to the effect of stationary pedestrians (the elderly with slow speed, the injured, and the static evacuation guide) as obstacles at the exit on the evacuation process. This paper explores the influence of the presence of a stationary pedestrian as an obstacle at the exit on the evacuation from experiments and simulations. We use a software, Pathfinder, based on the agent-based model to study the effect of ratios of exit width ($D$) to distance ($d$) between the static pedestrian and the exit, the asymmetric structure by shifting the static pedestrian upward, and types of obstacles on evacuation. Results show that the evacuation time of scenes with a static pedestrian is longer than that of scenes with an obstacle due to the unexpected hindering effect of the static pedestrian. Different ratios of $D/d$ have different effects on evacuation efficiency. Among the five $D/d$ ratios in this paper, the evacuation efficiency is the largest when $d$ is equal to $0.75D$, and the existence of the static pedestrian has a positive impact on evacuation in this condition. The influence of the asymmetric structure of the static pedestrian on evacuation efficiency is affected by $D/d$. This study can provide a theoretical basis for crowd management and evacuation plan near the exit of complex buildings and facilities. Select Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛) Chin. Phys. B, 2022, 31 (9): 098104.   DOI: 10.1088/1674-1056/ac657f Abstract （554）   HTML （0）    PDF （949KB）（73）       Knowledge map    We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging. Select Enrichment of microplastic pollution by micro-nanobubbles Jing Wang(王菁), Zihan Wang(王子菡), Fangyuan Pei(裴芳源), and Xingya Wang(王兴亚) Chin. Phys. B, 2022, 31 (11): 118104.   DOI: 10.1088/1674-1056/ac6161 Abstract （549）   HTML （2）    PDF （822KB）（397）       Knowledge map    Microplastic pollution has become a global environmental concern. It has been reported that microplastics are easily accessible to a wide range of aquatic organisms and ultimately enter the human body along the food chain. They pose a severe threat to ecosystems, organisms and even human health due to their durability and persistence. However, how to reduce microplastic pollution still remains a challenge in terms of scientific techniques and policy-making. There is currently still a lack of effective methods for microplastic recycling and removal. Luckily, a new technique, micro-nanobubbles (MNBs), may provide a possible and highly effective method to enrich microplastic pollution: their great advantages[1] include a high specific surface area, long lifetime and ability to adsorb microplastics of the same size and hydrophobicity. Then they further adsorb on larger bubbles such as microbubbles or millimeter bubbles and float to the water surface together. In this study, we present a new method using MNBs to enrich microplastic pollution with high efficiency. Two types of microplastics, millimeter-scale plastic fragments and microplastic particles, were chosen as the model microplastic pollution systems to study the enrichment efficiency of MNBs on microplastics. Results showed that MNBs can efficiently enrich these microplastics. The enrichment efficiency increases with flotation time until a maximum value is reached. It is proved that MNBs not only collect the microplastic pollution but also reduce detergent use in domestic laundry sewage. This is because detergent, as a surfactant, is easily absorbed on the surface of MNBs and can be collected together with the microplastic pollution. Our research has demonstrated that the MNB technique could be promising for use in microplastic recycling and reducing detergent pollution in daily life. Select High performance carrier stored trench bipolar transistor with dual shielding structure Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波) Chin. Phys. B, 2023, 32 (3): 038501.   DOI: 10.1088/1674-1056/ac873d Abstract （537）   HTML （2）    PDF （734KB）（294）       Knowledge map    We propose a novel high performance carrier stored trench bipolar transistor (CSTBT) with dual shielding structure (DSS-CSTBT). The proposed DSS-CSTBT features a double trench structure with different trench profiles in the surface, in which a shallow gate trench is shielded by a deep emitter trench and a thick oxide layer under it. Compared with the conventional CSTBT (con-CSTBT), the proposed DSS-CSTBT not only alleviates the negative impact of the shallow gate trench and highly doped CS layer on the breakdown voltage (BV), but also well reduces the gate-collector capacitance $C_{\rm GC}$, gate charge $Q_{\rm G}$, and turn-off loss $E_{\rm OFF}$ of the device. Furthermore, lower turn-on loss $E_{\rm ON}$ and gate drive loss $E_{\rm DR}$ are also obtained. Simulation results show that with the same CS layer doping concentration $N_{\rm CS}=1.5\times10^{16 }$ cm$^{-3}$, the BV increases from 1312 V of the con-CSTBT to 1423 V of the proposed DSS-CSTBT with oxide layer thickness under gate ($T_{\rm og2}$) of 1 μm. Moreover, compared with the con-CSTBT, the $C_{\rm GC}$ at $V_{\rm CE} $ of 25 V and miller plateau charge ($Q_{\rm GC}$) for the proposed DSS-CSTBT with $T_{\rm og2}$ of 1 μm are reduced by 79.4% and 74.3%, respectively. With the $V_{\rm GE} $ increases from 0 V to 15 V, the total $Q_{\rm G}$ for the proposed DSS-CSTBT with $T_{\rm og2}$ of 1 μm is reduced by 49.5%. As a result, at the same on-state voltage drop ($V_{\rm CEON}$) of 1.55 V, the $E_{\rm ON}$ and $E_{\rm OFF}$ are reduced from 20.3 mJ/cm$^{2}$ and 19.3 mJ/cm$^{2}$ for the con-CSTBT to 8.2 mJ/cm$^{2}$ and 9.7 mJ/cm$^{2}$ for the proposed DSS-CSTBT with $T_{\rm og2}$ of 1 μm, respectively. The proposed DSS-CSTBT not only significantly improves the trade-off relationship between the $V_{\rm CEON}$ and $E_{\rm OFF }$ but also greatly reduces the $E_{\rm ON}$. Select Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy Fang-Qi Lin(林芳祁), Nong Li(李农), Wen-Guang Zhou(周文广), Jun-Kai Jiang(蒋俊锴), Fa-Ran Chang(常发冉), Yong Li(李勇), Su-Ning Cui(崔素宁), Wei-Qiang Chen(陈伟强), Dong-Wei Jiang(蒋洞微), Hong-Yue Hao(郝宏玥), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), and Zhi-Chuan Niu(牛智川) Chin. Phys. B, 2022, 31 (9): 098504.   DOI: 10.1088/1674-1056/ac615d Abstract （532）   HTML （1）    PDF （1453KB）（251）       Knowledge map    By optimizing the V/III beam-equivalent pressure ratio, a high-quality InAs/GaSb type-II superlattice material for the long-wavelength infrared (LWIR) range is achieved by molecular beam epitaxy (MBE). High-resolution x-ray diffraction (HRXRD), atomic force microscopy (AFM), and Fourier transform infrared (FTIR) spectrometer are used to characterize the material growth quality. The results show that the full width at half maximum (FWHM) of the superlattice zero-order diffraction peak, the mismatching of the superlattice zero-order diffraction peak between the substrate diffraction peaks, and the surface roughness get the best results when the beam-equivalent pressure (BEP) ratio reaches the optimal value, which are 28 arcsec, 13 arcsec, and 1.63 Å, respectively. The intensity of the zero-order diffraction peak is strongest at the optimal value. The relative spectral response of the LWIR detector shows that it exhibits a 100% cut-off wavelength of 12.6 μm at 77 K. High-quality epitaxial materials have laid a good foundation for preparing high-performance LWIR detector. Select Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇) Chin. Phys. B, 2022, 31 (8): 088101.   DOI: 10.1088/1674-1056/ac673e Abstract （532）   HTML （0）    PDF （813KB）（276）       Knowledge map    Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated, and the corresponding degradation mechanism is proposed and verified. The maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same time. Trapping of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying mechanism. The observed degradation phenomena, including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale, current crowding in the output curve, and smaller degradation in transfer curves measured under large drain bias, can all be well explained with the proposed degradation mechanism. Select Combination of density-clustering and supervised classification for event identification in single-molecule force spectroscopy data Yongyi Yuan(袁泳怡), Jialun Liang(梁嘉伦), Chuang Tan(谭创), Xueying Yang(杨雪滢), Dongni Yang(杨东尼), and Jie Ma(马杰) Chin. Phys. B, 2023, 32 (10): 108702.   DOI: 10.1088/1674-1056/acf03e Abstract （530）   HTML （6）    PDF （2308KB）（552）       Knowledge map    Single-molecule force spectroscopy (SMFS) measurements of the dynamics of biomolecules typically require identifying massive events and states from large data sets, such as extracting rupture forces from force-extension curves (FECs) in pulling experiments and identifying states from extension-time trajectories (ETTs) in force-clamp experiments. The former is often accomplished manually and hence is time-consuming and laborious while the latter is always impeded by the presence of baseline drift. In this study, we attempt to accurately and automatically identify the events and states from SMFS experiments with a machine learning approach, which combines clustering and classification for event identification of SMFS (ACCESS). As demonstrated by analysis of a series of data sets, ACCESS can extract the rupture forces from FECs containing multiple unfolding steps and classify the rupture forces into the corresponding conformational transitions. Moreover, ACCESS successfully identifies the unfolded and folded states even though the ETTs display severe nonmonotonic baseline drift. Besides, ACCESS is straightforward in use as it requires only three easy-to-interpret parameters. As such, we anticipate that ACCESS will be a useful, easy-to-implement and high-performance tool for event and state identification across a range of single-molecule experiments. Select Accurate determination of anisotropic thermal conductivity for ultrathin composite film Qiu-Hao Zhu(朱秋毫), Jing-Song Peng(彭景凇), Xiao Guo(郭潇), Ru-Xuan Zhang(张如轩), Lei Jiang(江雷), Qun-Feng Cheng(程群峰), and Wen-Jie Liang(梁文杰) Chin. Phys. B, 2022, 31 (10): 108102.   DOI: 10.1088/1674-1056/ac6ee5 Abstract （523）   HTML （3）    PDF （4135KB）（388）       Knowledge map    Highly anisotropic thermal conductive materials are of significance in thermal management applications. However, accurate determination of ultrathin composite thermal properties is a daunting task due to the tiny thermal conductance, severely hindering the further exploration of novel efficient thermal management materials, especially for size-confined environments. In this work, by utilizing a hybrid measuring method, we demonstrate an accurate determination of thermal properties for montmorillonite/reduced graphene oxide (MMT/rGO) composite film with a thickness range from 0.2 μ m to 2 μ m. The in-plane thermal conductivity measurement is realized by one-dimensional (1D) steady-state heat conduction approach while the cross-plane one is achieved via a modified 3ω method. As-measured thermal conductivity results are cross-checked with different methods and known materials, revealing the high measurement accuracy. A high anisotropic ratio of 60.5, independent of composite thickness, is observed in our measurements, further ensuring the negligible measurement error. Notably, our work develops an effective approach to the determination of ultrathin composite thermal conductivity, which may promote the development of ultrathin composites for potential thermal-related applications. Select Nano Ag-enhanced photoelectric conversion efficiency in all-inorganic, hole-transporting-layer-free CsPbIBr2 perovskite solar cells Youming Huang(黄友铭), Yizhi Wu(吴以治), Xiaoliang Xu(许小亮), Feifei Qin(秦飞飞), Shihan Zhang(张诗涵), Jiakai An(安嘉凯), Huijie Wang(王会杰), and Ling Liu(刘玲) Chin. Phys. B, 2022, 31 (12): 128802.   DOI: 10.1088/1674-1056/ac89e8 Abstract （523）   HTML （0）    PDF （4167KB）（311）       Knowledge map    All-inorganic, hole-transporting-layer-free CsPbIBr2 perovskite solar cells have great potential for development, but their device performance needs to be further improved. Recently, metal nanostructures have been successfully applied in the field of solar cells to improve their performance. Nano Ag-enhanced power conversion efficiency (PCE) in one CsPbIBr2 perovskite solar cell utilizing localized surface plasmons of Ag nanoparticles (NPs) on the surface has been researched experimentally and by simulation in this paper. The localized surface plasmon resonance of Ag NPs has a near-field enhancement effect, which is expected to improve the light absorption of CsPbIBr2 perovskite photovoltaic devices. In addition, Ag NPs have a forward-scattering effect on the incident light, which can also improve the performance of CsPbIBr2-based perovskite photovoltaic devices. By directly assembling Ag NPs (with a size of about 150 nm) on the surface of fluorine-doped tin oxide it is found when the particle surface coverage is 10%, the CsPbIBr2 perovskite photovoltaic device achieves a best PCE of 2.7%, which is 9.76% higher than that of the control group. Without changing any existing structure in the ready-made solar cell, this facile and efficient method has huge applications. To the best of our knowledge, this paper is the first report on nano Ag-enhanced photoelectric conversion efficiency in this kind of CsPbIBr2 perovskite solar cell. Select Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇) Chin. Phys. B, 2022, 31 (9): 098502.   DOI: 10.1088/1674-1056/ac6159 Abstract （521）   HTML （0）    PDF （1544KB）（310）       Knowledge map    A novel 1200 V SiC super-junction (SJ) MOSFET with a partially widened pillar structure is proposed and investigated by using the two-dimensional numerical simulation tool. Based on the SiC SJ MOSFET structure, a partially widened P-region is added at the SJ pillar region to improve the short-circuit (SC) ability. After investigating the position and doping concentration of the widened P-region, an optimal structure is determined. From the simulation results, the SC withstand times (SCWTs) of the conventional trench MOSFET (CT-MOSFET), the SJ MOSFET, and the proposed structure at 800 V DC bus voltage are 15 μs, 17 μs, and 24 μs, respectively. The SCWTs of the proposed structure are increased by 60% and 41.2% in comparison with that of the other two structures. The main reason for the proposed structure with an enhanced SC capability is related to the effective suppression of saturation current at the high DC bias conditions by using a modulated P-pillar region. Meanwhile, a good Baliga's FOM ($BV^{2}/R_{\rm on}$) also can be achieved in the proposed structure due to the advantage of the SJ structure. In addition, the fabrication technology of the proposed structure is compatible with the standard epitaxy growth method used in the SJ MOSFET. As a result, the SJ structure with this feasible optimization skill presents an effect on improving the SC reliability of the SiC SJ MOSFET without the degeneration of the Baliga's FOM. Select Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平) Chin. Phys. B, 2023, 32 (2): 028504.   DOI: 10.1088/1674-1056/ac8cda Abstract （518）   HTML （6）    PDF （1582KB）（339）       Knowledge map    Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×106 ion·cm-2, the drain-gate channel current increased under 200 V drain voltage, the drain-gate channel current and the drain-source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain-gate channel current and drain-source channel current was found to have drain-gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source-gate corner or the substrate-epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain-source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain-gate channel damage. page Page 1 of 14 Total 279 records First page Prev page Next page Last page