Chinese Physics B
Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases
Tianyuan Song(宋天源), Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Qi Shan(单奇)
Chin. Phys. B . 2022, (8): 88101 -088101 .  DOI: 10.1088/1674-1056/ac673e

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