Chinese Physics B
High performance SiC trench-type MOSFET with an integrated MOS-channel diode
Jie Wei(魏杰), Qinfeng Jiang(姜钦峰), Xiaorong Luo(罗小蓉), Junyue Huang(黄俊岳), Kemeng Yang(杨可萌), Zhen Ma(马臻), Jian Fang(方健), and Fei Yang(杨霏)
Chin. Phys. B . 2023, (2): 28503 -028503 .  DOI: 10.1088/1674-1056/ac7cd5

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