High-mobility, low-resistive boron-doped diamond material realized by oxygen assistance

doi:10.1088/1674-1056/ae0636

Abstract The effect of trace oxygen on the light-doping behavior of boron in diamond films during microwave plasma chemical vapor deposition was experimentally investigated. Boron-doped diamond films were grown continuously under different oxygen concentrations [oxygen/carbon (O/C) = 0%-5%]. When oxygen was added during the diamond doping process, improvements in crystal quality and surface morphology were observed, and residual nitrogen was significantly suppressed. However, further increasing the oxygen concentration could lead to surface defects. We evaluated and discussed the carrier mobility, carrier concentration and boron content of the samples. At room temperature, under the condition of O/C $=$ 4%, the maximum hole mobility reached 1400 cm$^{2}\cdot $V$^{-1}\cdot $s$^{-1}$, and a higher carrier concentration of 1.5 $\times10^{15}$ cm$^{-3}$ was obtained, which is an excellent result compared with all previous studies. In addition, the characteristic peaks that appeared in both low-temperature photoluminescence spectra and absorption spectra were analyzed, and it was found that the characteristic peak at 4.7 eV (270 nm) may correspond to a boron-nitrogen complex, supplementing the effect of boron-doped diamond on defect formation. These findings demonstrate the potential of controlling the boron concentration in diamond films using oxygen concentration in a plasma environment and open avenues for future applications in advanced optoelectronic devices.

Keywords: diamond chemical vapor deposition impurity concentration electrical properties infrared and Raman spectra

Received: 07 July 2025
Revised: 11 September 2025
Accepted manuscript online: 12 September 2025

PACS:	81.05.ug	(Diamond)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	61.72.sd	(Impurity concentration)
	87.15.Pc	(Electronic and electrical properties)
	78.30.-j	(Infrared and Raman spectra)

Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 62274084 and 62574106).

Corresponding Authors: Kun Tang, Shulin Gu
E-mail: ktang@nju.edu.cn;slgu@nju.edu.cn

Cite this article:

Gengyou Zhao(赵耕右), Kun Tang(汤琨), Kai Yang(杨凯), Bo Feng(冯博), Liangxue Gu(顾梁雪), Xiang Xiong(熊翔), Tao Tao(陶涛), Bin Liu(刘斌), Jiandong Ye(叶建东), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Shulin Gu(顾书林) High-mobility, low-resistive boron-doped diamond material realized by oxygen assistance 2026 Chin. Phys. B 35 048101

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High-mobility, low-resistive boron-doped diamond material realized by oxygen assistance

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