Enhanced thermal stability of OLEDs based on an organic n-p heterojunction and its derivative

doi:10.1088/1674-1056/adfdc8

Abstract To address the issues of insufficient thermal stability in charge generation layers (CGLs) and carrier imbalance induced by high-temperature annealing in organic light-emitting diodes (OLEDs), this study proposes a metal oxide-doped organic n-p heterojunction (BPhen:Ag$_{2}$O/NPB:MoO$_{3}$) as the core functional layer and designs novel device structures based on its derivatives. By analyzing the performance evolution of heterojunction thin films and OLEDs under annealing treatments ranging from 27 $^\circ$C to 100 $^\circ$C, it was found that after high-temperature annealing, the surface MoO$_{3}$ particles became uniformly dispersed in the heterojunction films, with reduced roughness and no crystallization observed, demonstrating excellent thermal stability. Single-carrier device tests revealed that the current density reached its maximum value at 80 $^\circ$C annealing. In comparison, at 100 $^\circ$C annealing, the current density decreased due to the dissociation of charge-transfer complexes (CTCs), yet it remained higher than that under ambient conditions. Furthermore, the performance degradation of the newly developed p-i-n-p structure OLEDs after high-temperature annealing was significantly smaller compared to conventional p-i-n structures.

Keywords: organic light-emitting diodes metal oxide-doping organic heterojunction thermal stability

Received: 20 June 2025
Revised: 01 August 2025
Accepted manuscript online: 21 August 2025

PACS:	85.30.-z	(Semiconductor devices)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	72.80.Le	(Polymers; organic compounds (including organic semiconductors))
	68.60.Dv	(Thermal stability; thermal effects)

Fund: This work was financially supported by the National Natural Science Foundation of China (Grant No. 62304127) and the Natural Science Foundation of Shanghai Municipality (Grant No. 24ZR1422300).

Corresponding Authors: Weixia Lan
E-mail: weixia_lan@shu.edu.cn

Cite this article:

Wei Shi(施薇), Wei Zhao(赵微), Bingjia Zhao(赵冰佳), Yangyang Zhu(朱杨洋), Yang Lin(林洋), Yachen Xu(徐亚晨), Weixia Lan(兰伟霞), and Bin Wei(魏斌) Enhanced thermal stability of OLEDs based on an organic n-p heterojunction and its derivative 2026 Chin. Phys. B 35 038502

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Enhanced thermal stability of OLEDs based on an organic n-p heterojunction and its derivative

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