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Acoustic detection of high-resistance states in gated bilayer graphene devices |
| Guo-Quan Qin(秦国铨)1,2,3, Yi-Bo Wang(王奕博)1,2,3, Guo-Sheng Lei(雷国盛)1,2,3, Zhuo-Zhi Zhang(张拙之)1,2,3, Xiang-Xiang Song(宋骧骧)1,2,3,†, and Guo-Ping Guo(郭国平)1,3,4 |
1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China;
2 Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China;
3 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
4 Origin Quantum Computing Company Limited, Hefei 230088, China |
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Abstract Applying a perpendicular electric field to bilayer graphene (BLG) induces an electrically tunable bandgap, so that insulating states with resistances exceeding $\sim {{10}}^{{8}} { \Omega }$ can be generated. These high-resistance states pinch off the conducting channel, thereby enabling high-quality gated devices for classical and quantum electronics. However, it is challenging to precisely quantify these states electrically due to their high resistances, especially when different areas of the device are operated in different high-resistance states. Here, taking advantage of the strong acoustoelectric effect, we demonstrate the detection of these high-resistance states in a multi-gated BLG device using surface acoustic waves. Under different gating configurations, the device is operated in different high-resistance states. Although these states have similar resistances of $\sim {{10}}^{{8}} { \Omega }$, we show their acoustoelectric responses exhibit pronounced differences, thereby allowing the acoustic detection. More interestingly, we demonstrate that when the conducting channel is pinched off by one top gate, we are still able to acoustically, but not electrically, detect the gating effect of another top gate. Our results reveal the powerful capability and the promising future of acoustically characterizing BLG and other two-dimensional materials, especially their electronic states with high resistances.
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Received: 13 May 2025
Revised: 06 June 2025
Accepted manuscript online: 06 June 2025
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PACS:
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72.80.Vp
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(Electronic transport in graphene)
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43.38.Rh
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(Surface acoustic wave transducers)
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72.50.+b
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(Acoustoelectric effects)
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| Fund: Project supported by the Natural Science Foundation of Jiangsu Province (Grant No. BK20240123), the National Key Research and Development Program of China (Grant No. 2022YFA1405900), and the National Natural Science Foundation of China (Grant Nos. 12274397, 12274401, and 12034018). |
Corresponding Authors:
Xiang-Xiang Song
E-mail: songxx90@ustc.edu.cn
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Cite this article:
Guo-Quan Qin(秦国铨), Yi-Bo Wang(王奕博), Guo-Sheng Lei(雷国盛), Zhuo-Zhi Zhang(张拙之), Xiang-Xiang Song(宋骧骧), and Guo-Ping Guo(郭国平) Acoustic detection of high-resistance states in gated bilayer graphene devices 2025 Chin. Phys. B 34 097201
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