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Special Issue:
SPECIAL TOPIC — Structures and properties of materials under high pressure
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| SPECIAL TOPIC — Structures and properties of materials under high pressure |
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High thermoelectric performance of SnS under high pressure and high temperature |
| Yuqi Gao(高语崎), Xinglin Wang(王星淋), Cun You(由存), Dianzhen Wang(王殿振), Nan Gao(高楠), Qi Jia(贾琪), Zhihui Li(李志慧), Qiang Tao(陶强)†, and Pinwen Zhu(朱品文)‡ |
| Synergetic Extreme Condition High-Pressue Science Center, State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University, Changchun 130012, China |
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Abstract Tin sulfide (SnS) is a promising non-toxic thermoelectric (TE) material to replace SnSe (Se is toxic), due to its similar structure and low thermal conductivity ($\kappa$) comparable to SnSe. However, the poor electrical conductivity ($\sigma$) of SnS results in lower TE performance. In this work, high pressure was utilized to regulate the electronic structure, thereby mediating the conflict of electron and phonon transport to optimize the TE performance. In situ measurements of thermoelectric properties for SnS under high pressure and high temperature revealed that although the Seebeck coefficient ($S$) and $\kappa$ slightly decrease with increasing pressure, the $\sigma$ dramatically increases with increasing pressure, finally increasing the dimensionless figure of merit ($ZT$). The $\sigma $ increases from 2135 S$\cdot$m$^{-1}$ to 83549 S$\cdot$m$^{-1}$ as the pressure increases from 1 GPa to 5 GPa at 325 K, representing an increase of an order of magnitude. The high $\sigma $ of SnS leads to an increase in the $PF$ to 1436 μW$\cdot$m$^{-1}\cdot$K$^{-2}$ at 5 GPa and 652 K. The maximum $ZT$ value of 0.77 at 5 GPa and 652 K was obtained, which is 4 times the maximum $ZT$ under ambient pressure and is comparable to that of doped SnS. The increase in $\sigma$ is due to the fact that pressure modulates the band structure of SnS by narrowing the band gap from 1.013 eV to 0.712 eV. This study presents a valuable guide for searching new high TE performance materials using high pressure.
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Received: 10 March 2025
Revised: 18 May 2025
Accepted manuscript online: 22 May 2025
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PACS:
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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66.70.-f
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(Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)
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02.30.Cj
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(Measure and integration)
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71.20.-b
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(Electron density of states and band structure of crystalline solids)
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| Fund: The high-pressure experiments were performed at the B1 station of the Synergetic Extreme Condition User Facility (SECUF). The authors acknowledge funding support from the Program for the Development of Science and Technology of Jilin Province (Grant No. SKL202402004), the Jilin Province Major Science and Technology Program (Grant No. 20240211002GX), and the Open Research Fund of the Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education (Jilin Normal University, 202405). |
Corresponding Authors:
Qiang Tao, Pinwen Zhu
E-mail: qiangtao@jlu.edu.cn;zhupw@jlu.edu.cn
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Cite this article:
Yuqi Gao(高语崎), Xinglin Wang(王星淋), Cun You(由存), Dianzhen Wang(王殿振), Nan Gao(高楠), Qi Jia(贾琪), Zhihui Li(李志慧), Qiang Tao(陶强), and Pinwen Zhu(朱品文) High thermoelectric performance of SnS under high pressure and high temperature 2025 Chin. Phys. B 34 087201
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