Field induced Chern insulating states in twisted monolayer–bilayer graphene

doi:10.1088/1674-1056/ad3b8a

Abstract Unraveling the mechanism underlying topological phases, notably the Chern insulators (ChIs) in strong correlated systems at the microscopy scale, has captivated significant research interest. Nonetheless, ChIs harboring topological information have not always manifested themselves, owing to the constraints imposed by displacement fields in certain experimental configurations. In this study, we employ density-tuned scanning tunneling microscopy (DT-STM) to investigate the ChIs in twisted monolayer–bilayer graphene (tMBG). At zero magnetic field, we observe correlated metallic states. While under a magnetic field, a metal–insulator transition happens and an integer ChI is formed emanating from the filling index $ s = 3$ with a Chern number $C = 1$. Our results underscore the pivotal role of magnetic fields as a powerful probe for elucidating topological phases in twisted Van der Waals heterostructures.

Keywords: Chern insulators strong correlation effects two-dimensional van der Waals heterostructure density-tuned scanning tunneling microscopy (DT-STM)

Received: 09 March 2024
Revised: 07 April 2024
Accepted manuscript online:

PACS:	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	73.22.Pr	(Electronic structure of graphene)
	85.30.Tv	(Field effect devices)

Corresponding Authors: Yuhang Jiang, Jinhai Mao
E-mail: yuhangjiang@ucas.ac.cn;jhmao@ucas.ac.cn

Cite this article:

Zhengwen Wang(王政文), Yingzhuo Han(韩英卓), Kenji Watanabe, Takashi Taniguchi, Yuhang Jiang(姜宇航), and Jinhai Mao(毛金海) Field induced Chern insulating states in twisted monolayer–bilayer graphene 2024 Chin. Phys. B 33 067301

1. 2024-067301-SI.pdf(4024KB)

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