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Chin. Phys. B, 2020, Vol. 29(10): 108504    DOI: 10.1088/1674-1056/ab99b8

Investigation of single event effect in 28-nm system-on-chip with multi patterns

Wei-Tao Yang(杨卫涛)1,4, Yong-Hong Li(李永宏)1,†, Ya-Xin Guo(郭亚鑫)1, Hao-Yu Zhao(赵浩昱)1, Yang Li(李洋)1, Pei Li(李培)1, Chao-Hui He(贺朝会)1, Gang Guo(郭刚)2, Jie Liu(刘杰)3, Sheng-Sheng Yang(杨生胜)5, and Heng An(安恒)5
1 School of Nuclear Science & Technology, Xi’an Jiaotong University, Xi’an 710049, China
2 National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China
3 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
4 Dipartimento di Automatica e Informatica, Politecnico di Torino, Torino 10129, Italy
5 Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China

Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.

Keywords:  system-on-chip      heavy ion      single event effect  
Received:  07 May 2020      Revised:  19 May 2020      Accepted manuscript online:  05 June 2020
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  21.60.Ka (Monte Carlo models)  
Corresponding Authors:  Corresponding author. E-mail:   
About author: 
†Corresponding author. E-mail:
* Project supported by the National Natural Science Foundation of China (Grant Nos. 11575138, 11835006, 11690040, and 11690043), the Fund from Innovation Center of Radiation Application (Grant No. KFZC2019050321), the Fund from the Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics (Grant No. ZWK1804), and the Program of China Scholarships Council (Grant No. 201906280343).

Cite this article: 

Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏)†, Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), and Heng An(安恒) Investigation of single event effect in 28-nm system-on-chip with multi patterns 2020 Chin. Phys. B 29 108504

Facility Ions Energy/MeV LET/MeV⋅cm2⋅mg−1 Range in silicon/μm
Cl 160 13.1 46.0
HI-13 Si 135 9.3 50.7
C 80 1.7 127.1
HIRFL Ta 1697.4 78.3 99.3
Table 1.  

The used ions in the heavy ion irradiation.

Fig. 1.  

SEU cross sections in HI-13 irradiation.

LET/MeV⋅cm2⋅mg−1 CPU pattern Data test SEU SEFI
13.1 AMP Static 504 44
SP Dynamic 175 33
9.3 AMP Static 252 38
SP Dynamic 124 26
1.7 AMP Static 91 7
SP Dynamic 40 4
Table 2.  

The detected errors in the HI-13 irradiation.

Fig. 2.  

SEFI cross sections in the HI-13 irradiation.

CPU pattern Data test Fluence/cm−2
AMP Dynamic 2.1 × 105
SP Static 3.0 × 105
Dynamic 2.5 × 105
Table 3.  

The parameters of the tests in HIRFL irradiation.

CPU pattern Data test SEU SEFI
AMP Dynamic 284 47
SP Static 1277 33
Dynamic 254 41
Table 4.  

The detected SEE in HIRFL irradiation.

Fig. 3.  

The detected upset cells in the HIRFL irradiation.

Fig. 4.  

The cross sections of the tests in HIRFL irradiation.

Fig. 5.  

The detected currents in the HIRFL irradiation, (a) the currents are higher than the normal case, (b) a part of the currents are less than the normal case.

LET/MeV⋅cm2⋅mg−1 13.1 9.3 1.7
Cross section ratio (static/dynamic) 2.88 2.03 2.28
Table 5.  

The cross sections ratio between static and dynamic tests in HI-13 irradiation.

Fig. 6.  

The Weibull fitting from the irradiation tests.

σsat/cm2⋅bit−1 Lth/MeV⋅cm2⋅mg−1 W S
Static cross section fitting 1.9 × 10−8 0.55 35 1.98
Dynamic cross section fitting 3.7 × 10−9 0.55 29 1.87
Table 6.  

The Weibull function parameters for both fittings.

Bit error/bit−1⋅day−1 Device error/device−1⋅day−1
Static 2.46 × 10−8 5.16 × 10−2
Dynamic 1.35 × 10−8 2.83 × 10−2
Table 7.  

The predicted SoC orbit soft error rate.

Fig. 7.  

SEFI cross section of different tests in HIRFL irradiation.

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