Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement
Runrun Hao(郝润润)1,2,†, Kun Zhang(张昆)1,2,†, Yinggang Li(李迎港)1,2, Qiang Cao(曹强)3, Xueying Zhang(张学莹)1,2,4,‡, Dapeng Zhu(朱大鹏)1,2,§, and Weisheng Zhao(赵巍胜)1,2
1 Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China; 2 Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China; 3 Spintronics Institute, University of Jinan, Jinan 250022, China; 4 Truth Instruments Co. Ltd., Qingdao 266000, Chin
Abstract Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect. However, the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process, or the non-electric approach of Kerr imaging technique. Here, we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field. In this case, the symmetry of MR is broken, resulting in a resistance difference for opposite magnetization orientations. Moreover, the feasibility of our method is widely evidenced in heavy metal/ferromagnet (Pt/Ni20Fe80 and W/Co20Fe60B20) and the topological insulator/ferromagnet (Bi2Se3/Ni20Fe80). Our work simplifies the characterization process of the in-plane magnetization switching, which can promote the development of SOT-based devices.
(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11904017, 11974145, 51901008, and 12004024), Shandong Provincial Natural Science Foundation, China (Grant No. ZR2020ZD28), platform from Qingdao Science and Technology Commission, and the Fundamental Research Funds for the Central Universities of China.
Runrun Hao(郝润润), Kun Zhang(张昆), Yinggang Li(李迎港), Qiang Cao(曹强), Xueying Zhang(张学莹), Dapeng Zhu(朱大鹏), and Weisheng Zhao(赵巍胜) Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement 2022 Chin. Phys. B 31 017502
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