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Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃ |
Qing Liao(廖庆)1, Bingsheng Li(李炳生)1, Long Kang(康龙)2, Xiaogang Li(李小刚)2 |
1 State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China; 2 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China |
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Abstract The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 ℃ followed by annealing at 1500 ℃ are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 ℃. The possible reasons are discussed.
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Received: 12 January 2020
Revised: 07 April 2020
Accepted manuscript online:
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PACS:
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61.80.-x
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(Physical radiation effects, radiation damage)
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61.80.Jh
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(Ion radiation effects)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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78.40.Fy
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(Semiconductors)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. U1832133) and the Doctor Research Foundation of Southwest University of Science and Technology, China (Grant No. 18zx7141). |
Corresponding Authors:
Bingsheng Li
E-mail: libingshengmvpmvp@163.com
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Cite this article:
Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚) Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃ 2020 Chin. Phys. B 29 076103
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