Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

doi:10.1088/1674-1056/28/5/057102

Abstract

Te-doped GaSb single crystal grown by the liquid encapsulated Czochralski (LEC) method exhibits a lag of compensating progress and a maximum carrier concentration around 8×10¹⁷ cm^-3. The reason for this phenomenon has been investigated by a quantity concentration evaluation of the Te donor and native acceptor. The results of glow discharge mass spectrometry (GDMS) and Hall measurement suggest that the acceptor concentration increases with the increase of Te doping concentration, resulting in the enhancement of electrical compensation and free electron concentration reduction. The acceptor concentration variation is further demonstrated by photoluminescence spectra and explained by the principle of Fermi level dependent defect formation energy.

Keywords: GaSb defect compensation Hall effect measurement photoluminescence spectroscopy

Received: 25 January 2019
Revised: 28 February 2019
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)
	81.05.Ea	(III-V semiconductors)
	81.70.Jb	(Chemical composition analysis, chemical depth and dopant profiling)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

Corresponding Authors: Youwen Zhao
E-mail: zhaoyw@semi.ac.cn

Cite this article:

Ding Yu(余丁), Guiying Shen(沈桂英), Hui Xie(谢辉), Jingming Liu(刘京明), Jing Sun(孙静), Youwen Zhao(赵有文) Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal 2019 Chin. Phys. B 28 057102

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Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

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