Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

doi:10.1088/1674-1056/27/12/128502

Abstract

We demonstrate a reconfigurable black phosphorus electrical field transistor, which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride flakes. Varied homojunctions could be realized by controlling both source-drain and top-gate voltages. With the spatially resolved scanning photocurrent microscopy technique, photovoltaic photocurrents originated from the band-bending regions are observed, confirming nine different configurations for each set of fixed voltages. In addition, as a phototransistor, high responsivity (~800 mA/W) and fast response speed (~230 μs) are obtained from the device. The reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.

Keywords: black phosphorus reconfigurable heterostructure photovoltaic effect photocurrent

Received: 20 September 2018
Revised: 30 September 2018
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	85.60.Bt	(Optoelectronic device characterization, design, and modeling)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)

Fund:

Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0307200 and 2017YFA0303800), the National Natural Science Foundations of China (Grant Nos. 61522507 and 61775183), the Key Research and Development Program in Shaanxi Province of China (Grant No. 2017KJXX-12), and the Fundamental Research Funds for the Central Universities (Grant Nos. 3102017jc01001 and 3102018jcc034).

Corresponding Authors: Xuetao Gan
E-mail: xuetaogan@nwpu.edu.cn

Cite this article:

Siqi Hu(胡思奇), Ruijuan Tian(田睿娟), Xiaoguang Luo(罗小光), Rui Yin(殷瑞), Yingchun Cheng(程迎春), Jianlin Zhao(赵建林), Xiaomu Wang(王肖沐), Xuetao Gan(甘雪涛) Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors 2018 Chin. Phys. B 27 128502

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Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

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