HfO2-based ferroelectric modulator of terahertz waves with graphene metamaterial
Ran Jiang(蒋然)1, Zheng-Ran Wu(吴正冉)2, Zu-Yin Han(韩祖银)3, Hyung-Suk Jung2
1 Physical School, Shandong University, Jinan 250100, China;
2 Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea
Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology.
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