Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

doi:10.1088/1674-1056/abe372

Abstract The various advantages of extended-source (ES), broken gate (BG), and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-effect transistor (ESBG TFET) in order to enhance the direct-current and analog/radio-frequency performance. The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction, and then, the on-state current for the ESBG TFET increases. The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail. The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 10¹³, large transconductance of 1200 μS/μm, high cut-off frequency of 72.8 GHz, and high gain bandwidth product of 14.3 GHz. Apart from these parameters, the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second- and third-order voltage intercept points, the third-order input interception point, and the third-order intermodulation distortion. Therefore, the ESBG TFET greatly promotes the application potential of conventional TFETs.

Keywords: extended-source broken gate radio-frequency performances tunnel field-effect transistor

Received: 28 November 2020
Revised: 11 January 2021
Accepted manuscript online: 05 February 2021

PACS:	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	81.05.Ea	(III-V semiconductors)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the University Natural Science Research Key Project of Anhui Province (Grant No. KJ2020A0075) and Excellent Talents Supported Project of Colleges and Universities (Grant No. gxyq2018048).

Corresponding Authors: Hui-Fang Xu
E-mail: xu0342@163.com

Cite this article:

Hui-Fang Xu(许会芳), Wen Sun(孙雯), and Na Wang(王娜) Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance 2021 Chin. Phys. B 30 078503

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Extended-source broken gate tunnel FET for improving direct current and analog/radio-frequency performance

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