Hunting down the ohmic contact of organic field-effect transistor

doi:10.1088/1674-1056/ab44a1

Abstract We report properties of contact resistances observed on pentacene organic field-effect transistors (OFET) with four different source/drain electrodes, namely, copper (Cu), gold (Au), silver (Ag), and germanium (Ge). The metals were selected to provide a wide range of energy barriers for charge injection, from blocking contact to smooth injection. All OFETs exhibited strong voltage dependence of the contact resistance, even for devices with smooth injection, which is in strong disagreement with the definition of ohmic contacts. A comparison with current crowding, resistive network, Fowler-Nordheim tunneling, and electric field enhanced thermionic injection (Schottky emission) pointed to importance of local electric fields and/or electrostatic field charges.

Keywords: organic field-effect transistors contact resistance charge injection

Received: 10 July 2019
Revised: 29 August 2019
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	73.40.Cg	(Contact resistance, contact potential)
	73.61.Ph	(Polymers; organic compounds)

Fund: Project supported by the Slovak Research and Development Agency (Grant Nos. APVV-17-0501 and APVV-17-0522) and the Slovak Grant Agency for Science (Grants No. 1/0776/15).

Corresponding Authors: M Weis
E-mail: martin.weis@stuba.sk

Cite this article:

M Micjan, M Novota, P Telek, M Donoval, M Weis Hunting down the ohmic contact of organic field-effect transistor 2019 Chin. Phys. B 28 118501

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Hunting down the ohmic contact of organic field-effect transistor

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