Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

doi:10.1088/1674-1056/ab7d99

Abstract A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance. By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing (SS) due to the improved band-to-band tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec. Furthermore, the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.

Keywords: vertical graded source band-to-band tunneling (BTBT) tunnel field-effect transistor (TFET)

Received: 23 December 2019
Revised: 05 February 2020
Accepted manuscript online:

PACS:	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	81.05.Ea	(III-V semiconductors)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 90304190002).

Corresponding Authors: Hongliang Lu
E-mail: hllv@mail.xidian.edu.cn

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Zhijun Lyu(吕智军), Hongliang Lu(吕红亮), Yuming Zhang(张玉明), Yimen Zhang(张义门), Bin Lu(芦宾), Yi Zhu(朱翊), Fankang Meng(孟凡康), Jiale Sun(孙佳乐) Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source 2020 Chin. Phys. B 29 058501

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Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

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